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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 275 Displaying: 101 - 120| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 101. | BC107 | 45V Vce, 0.1A Ic, 150MHz NPN bipolar transistor | SAMEL | TO18 | - | - | - | 14K | | 102. | BC109 | 20V Vce, 0.1A Ic, 150MHz NPN bipolar transistor | SAMEL | TO18 | - | - | - | 14K | | 103. | BC161-16 | Amplifier transistor | MOT | TO-39 | 3 | -65°C | 200°C | 199K | | 104. | BC182 | NPN silicon amplifier transistor | MOT | - | 3 | -55°C | 150°C | 111K | | 105. | BC182A | NPN silicon aplifier transistor | MOT | - | 3 | -55°C | 150°C | 111K | | 106. | BC182A | NPN silicon aplifier transistor | MOT | - | 3 | -55°C | 150°C | 111K | | 107. | BC182B | NPN silicon amplifier transistor | MOT | - | 3 | -55°C | 150°C | 111K | | 108. | BC183 | NPN silicon amplifier transistor | MOT | - | 3 | -55°C | 150°C | 111K | | 109. | BC184 | NPN silicon aplifier transistor | MOT | - | 3 | -55°C | 150°C | 111K | | 110. | IRG4BC10K | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A | IRF | - | 3 | -55°C | 150°C | 158K | | 111. | IRG4BC10KD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A | IRF | - | 3 | -55°C | 150°C | 210K | | 112. | IRG4BC10S | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A | IRF | - | 3 | -55°C | 150°C | 157K | | 113. | IRG4BC10SD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A | IRF | - | 3 | -55°C | 150°C | 210K | | 114. | IRG4BC10SD-L | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A | IRF | TO-262 | 3 | -55°C | 150°C | 217K | | 115. | IRG4BC10SD-S | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A | IRF | DDPak | 3 | -55°C | 150°C | 217K | | 116. | IRG4BC10UD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.150V @ VGE = 15V, IC = 5.0A, tf(typ) = 140ns. | IRF | - | 3 | -55°C | 150°C | 184K | | 117. | IRG4BC15MD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.88V @ VGE = 15V, IC = 8.5A | IRF | - | 3 | -55°C | 150°C | 256K | | 118. | IRG4BC15UD-L | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8A | IRF | TO-262 | 3 | -55°C | 150°C | 210K | | 119. | IRG4BC15UD-S | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8A | IRF | DDPak | 3 | -55°C | 150°C | 210K | | 120. | IRG4BC15UD-S | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8A | IRF | DDPak | 3 | -55°C | 150°C | 210K |
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