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# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
101. | FDB6021P | 20V P-Channel 1.8V Specified PowerTrench MOSFET | FAIR | - | - | - | - | 80K |
102. | FQB60N03L | 30V LOGIC N-Channel MOSFET | FAIR | - | - | - | - | -- |
103. | KSB601 | PNP Epitaxial Silicon Transistor | FAIR | - | - | - | - | 48K |
104. | MB6010 | T1/MH89760 magnetics kit. For use in supporting development activities | MITEL | - | - | - | - | 8M |
105. | MB6012 | DNIC accessory kit. For use in supporting development activities | MITEL | - | - | - | - | 8M |
106. | MB6013 | MT8940 crystal kit. For use in supporting development activities | MITEL | - | - | - | - | 8M |
107. | MB6017 | CEPT/MH89790 magnetics kit. For use in supporting development activities | MITEL | - | - | - | - | 8M |
108. | MB6022 | MT8941 crystal kit. For use in supporting development activities | MITEL | - | - | - | - | 8M |
109. | MB6024 | DSLIC accessory kit (low L). For use in supporting development activities | MITEL | - | - | - | - | 8M |
110. | NDB6020P | P-Channel Logic Level Enhancement Mode Field Effect Transistor | FAIR | - | - | - | - | 62K |
111. | NDB603AL | N-channel logic level enhancement mode field effect transistor, 30V, 25A | FAIR | TO-263AB | 3 | -65°C | 175°C | 65K |
112. | SB601 | 50 V, 6.0 A silicon bridge | SURGE | SB | 4 | -65°C | 150°C | 90K |
113. | SB602 | 100 V, 6.0 A silicon bridge | SURGE | SB | 4 | -65°C | 150°C | 90K |
114. | SB603 | 200 V, 6.0 A silicon bridge | SURGE | SB | 4 | -65°C | 150°C | 90K |
115. | SB604 | 400 V, 6.0 A silicon bridge | SURGE | SB | 4 | -65°C | 150°C | 90K |
116. | STB60NF06 | N-CHANNEL 60V 0.014 OHM 60A D2PAK STRIPFET POWER MOSFET | STM | - | - | - | - | 425K |
117. | STB60NF06L | N-CHANNEL 60V - 0.014 OHM - 60A D2PAK/TO-220 STRIPFET II POWER MOSFET | STM | - | - | - | - | 472K |
118. | STB60NH02L | N-CHANNEL 24V - 0.0085 OHM - 60A D2PAK STRIPFET III POWER MOSFET | STM | - | - | - | - | 423K |
119. | STD2NB60-1 | N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET | STM | - | - | - | - | 291K |
120. | STD2NB60T4 | N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET | STM | - | - | - | - | 291K |
121. | STD2NB60T4 | N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET | STM | - | - | - | - | 291K |