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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 101. | MB5005 | 50 mA single-phase silicon bridge rectifier | DCCOM | MB-25 | 4 | -55°C | 150°C | 469K |
| 102. | MB501 | 50 mA single-phase silicon bridge rectifier | DCCOM | MB-25 | 4 | -55°C | 150°C | 469K |
| 103. | MB501L | Two modulus prescaler | FJTSU | plastic DIP | 8 | -40°C | 85°C | 237K |
| 104. | MB501L | Two modulus prescaler | FJTSU | plastic FPT | 8 | -40°C | 85°C | 237K |
| 105. | MB502 | 50 mA single-phase silicon bridge rectifier | DCCOM | MB-25 | 4 | -55°C | 150°C | 469K |
| 106. | MB504 | 50 mA single-phase silicon bridge rectifier | DCCOM | MB-25 | 4 | -55°C | 150°C | 469K |
| 107. | MB504 | Two modulus prescaler | FJTSU | plastic DIP | 8 | -40°C | 85°C | 237K |
| 108. | MB504 | Two modulus prescaler | FJTSU | plastic FPT | 8 | -40°C | 85°C | 237K |
| 109. | MB504L | Two modulus prescaler | FJTSU | plastic FPT | 8 | -40°C | 85°C | 237K |
| 110. | MB506 | 50 mA single-phase silicon bridge rectifier | DCCOM | MB-25 | 4 | -55°C | 150°C | 469K |
| 111. | MTB50N06EL | TMOS E-FET power field effect transistor D2PAK for surface mount | MOT | DPAK | 4 | -55°C | 150°C | 97K |
| 112. | MTB50N06V | TMOS V power field effect transistor D2PAK for surface mount | MOT | DPAK | 4 | -55°C | 175°C | 289K |
| 113. | MTB50N06V | TMOS V power field effect transistor D2PAK for surface mount | MOT | DPAK | 4 | -55°C | 175°C | 289K |
| 114. | MTB50N06VL | TMOS V power field effect transistor D2PAK for surface mount | MOT | DPAK | 4 | -55°C | 175°C | 249K |
| 115. | MTB50P03HDL | HDTMOS E-FET high energy power FET D2PAK for surface mount | MOT | DPAK | 4 | -55°C | 150°C | 182K |
| 116. | USB50805C | Transient Voltage Suppressor | MSEMI | S08 | - | - | - | 91K |
| 117. | USB50815C | Transient Voltage Suppressor | MSEMI | S08 | - | - | - | 91K |
| 118. | USB50824C | Transient Voltage Suppressor | MSEMI | S08 | - | - | - | 91K |
| 119. | VHB50-28F | NPN silicon RF power transistor | ADVAN | - | 4 | -65°C | 200°C | 18K |
| 120. | VHB50-28S | NPN silicon RF power transistor | ADVAN | - | 4 | -65°C | 200°C | 17K |
