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GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.

Found: 194      Displaying: 121 - 140
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
121.
1SMB40A40 V, 600Watt, Uni-directional glass passivated junction transient voltage suppressor
CENTR
SMB
-
-65°C
150°C
90K
122.
1SMB40AT3600W peak power, 40 V zener transient suppressor
MOT
C403A
2
-65°C
150°C
50K
123.
1SMB40AT3600W peak power, 40 V zener transient suppressor
MOT
C403A
2
-65°C
150°C
50K
124.
1SMB40CA40 V, 600Watt, Bi-directional glass passivated junction transient voltage suppressor
CENTR
SMB
-
-65°C
150°C
97K
125.
B40C1000100V, 1.0A bridge rectifier
WTE
-
4
-55°C
125°C
45K
126.
B40C1500100V, 1.5A bridge rectifier
WTE
-
4
-55°C
125°C
45K
127.
B40C1500100V, 1.5A bridge rectifier
WTE
-
4
-55°C
125°C
45K
128.
B40C2200100V, 3.7A bridge rectifier
WTE
-
4
-55°C
150°C
46K
129.
B40C2200100V, 3.7A bridge rectifier
WTE
-
4
-55°C
150°C
46K
130.
B40C3300100V, 5.0A bridge rectifier
WTE
SIL
4
-55°C
150°C
45K
131.
B40C3700100V, 3.7A bridge rectifier
WTE
-
4
-55°C
150°C
46K
132.
B40C3700100V, 3.7A bridge rectifier
WTE
-
4
-55°C
150°C
46K
133.
B40C5000100V, 5.0A bridge rectifier
WTE
SIL
4
-55°C
150°C
45K
134.
CEB4050AL N-channel enhancement mode field effect transistor
CETSE
TO-263
3
-65°C
175°C
504K
135.
CEB4060A N-channel enhancement mode field effect transistor
CETSE
TO-263
3
-65°C
175°C
507K
136.
CEB4060AL N-channel enhancement mode field effect transistor
CETSE
TO-263
3
-65°C
175°C
508K
137.
CEB4060ALR N-channel enhancement mode field effect transistor
CETSE
TO-263
3
-65°C
175°C
526K
138.
CEB4060AR N-channel enhancement mode field effect transistor
CETSE
TO-263
3
-65°C
175°C
524K
139.
CEB4060L N-channel enhancement mode field effect transistor
CETSE
TO-263
3
-65°C
175°C
505K
140.
LB401130 Watt, silicon gate enhancement mode RF power LDMOS transistor
POFET
-
4
-65°C
150°C
38K
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