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# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
21. | B230 | 30V, 2.0A surface mount schottky barrier rectifier | LITON | SMB | 2 | -55°C | 125°C | 36K |
22. | B230/A | 30V; 2.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection | DIODS | SMA | 2 | -65°C | 150°C | 45K |
23. | C430-CB230-E1000 | 650uW; 15mA; super bright LED for high resolution video displays | CREE | - | - | -20°C | 80°C | 195K |
24. | C460-CB230-E1000 | 1.3W; color:deep blue; 3.7V; low current InGaN LED | CREE | - | - | - | - | 344K |
25. | C470-CB230-E1000 | 1.3W; color:deep blue; 3.7V; low current InGaN LED | CREE | - | - | - | - | 344K |
26. | C525-CB230-E1000 | 0.650W; color:green; 3.7V; low current InGaN LED | CREE | - | - | - | - | 344K |
27. | CXXX-CB230-E1000 | 5V; 125mA; super bright LED. For communication handsets, backlighting, high resolution video displays | CREE | - | - | -20°C | 80°C | 204K |
28. | PMB2306T | PLL-frequency synthesizer | SMNS | P-DSO | 14 | -40°C | 85°C | 760K |
29. | PTB23001X | NPN microwave power transistor. | PHLPS | SOT440A | 3 | 0°C | 200°C | -- |
30. | PTB23003X | 40 V, NPN microwave power transistor | PHLPS | SOT | 3 | - | - | 58K |
31. | PTB23003X | 40 V, NPN microwave power transistor | PHLPS | SOT | 3 | - | - | 58K |
32. | PTB23003X | NPN microwave power transistor. | PHLPS | SOT440A | 3 | 0°C | 200°C | 99K |
33. | PTB23005X | NPN microwave power transistor. | PHLPS | SOT440A | 3 | 0°C | 200°C | 99K |
34. | PTB23006U | 40 V, microwave power transistor | PHLPS | SOT | 3 | - | - | 75K |
35. | SB230 | 30 V, 2 A, schottky barrier rectifier | TRSYS | DO-15 | 2 | -50°C | 125°C | 157K |
36. | T10B230B | T10B series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 200V,max. Ir = 50uA @ Vr = 230V,max, Bulk (500pcs). | LIFUS | - | 2 | -40°C | 150°C | 70K |
37. | T10B230T | T10B series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 200V,max. Ir = 50uA @ Vr = 230V,max, Tape and reeled (1500pcs). | LIFUS | - | 2 | -40°C | 150°C | 70K |
38. | TB2300H | 190V; 100A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction | DIODS | SMB | 2 | -40°C | 150°C | 184K |
39. | TB2300L | 190V; 30A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction | DIODS | SMB | 2 | -40°C | 150°C | 190K |
40. | TB2300M | 190V; 50A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction | DIODS | SMB | 2 | -40°C | 150°C | 187K |