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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 41. | 2SB1115-T2 | Silicon transistor | NEC | - | - | - | - | 228K |
| 42. | 2SB1115A | Silicon transistor | NEC | - | - | - | - | 228K |
| 43. | 2SB1115A-T1 | Silicon transistor | NEC | - | - | - | - | 228K |
| 44. | 2SB1115A-T2 | Silicon transistor | NEC | - | - | - | - | 228K |
| 45. | 2SB1148 | Silicon PNP epitaxial planar type power transistor | PANAS | - | - | - | - | 59K |
| 46. | 2SB1148A | Silicon PNP epitaxial planar type power transistor | PANAS | - | - | - | - | 59K |
| 47. | 2SB1154 | Silicon PNP epitaxial planar type power transistor | PANAS | - | - | - | - | 61K |
| 48. | 2SB1155 | Silicon PNP epitaxial planar type power transistor | PANAS | - | - | - | - | 61K |
| 49. | 2SB1156 | Silicon PNP epitaxial planar type power transistor | PANAS | - | - | - | - | 61K |
| 50. | BB112 | Silicon variable capacitance diode | SMNS | - | 3 | -55°C | 85°C | 41K |
| 51. | KTB1151 | PNP transistor for low collector saturation voltage large current applications | KEC | TO-126 | 3 | -55°C | 150°C | 383K |
| 52. | QRB1113 | Reflective Object Sensor. Phototransistor | QT | - | - | - | - | 146K |
| 53. | QRB1114 | Reflective Object Sensor. Phototransistor | QT | - | - | - | - | 146K |
| 54. | QRB1133 | Reflective Object Sensor. Phototransistor | QT | - | - | - | - | 148K |
| 55. | QRB1134 | Reflective Object Sensor. Phototransistor | QT | - | - | - | - | 148K |
| 56. | QVB11123 | Phototransistor Optical Interrupter Switche with Tabs/Gap Width=3.18 mm | QT | - | - | - | - | 185K |
| 57. | QVB11124 | Phototransistor Optical Interrupter Switche with Tabs/Gap Width=3.18 mm | QT | - | - | - | - | 185K |
| 58. | QVB11223 | Phototransistor Optical Interrupter Switche with Tabs/Gap Width=3.18 mm | QT | - | - | - | - | 185K |
| 59. | QVB11224 | Phototransistor Optical Interrupter Switche with Tabs/Gap Width=3.18 mm | QT | - | - | - | - | 185K |
| 60. | SB1100 | 1.0 Ampere Schottky Barrier Rectifiers | FAIR | - | - | - | - | 36K |
