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Found: 324      Displaying: 221 - 240
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
221.
B1100/B100V; 1.0A high voltage schottky barrier rectifier. For use in low voltage, high frequency inverters, free wheeling and polarity protection application
DIODS
SMA
2
-65°C
150°C
64K
222.
B1100LB100V; 1.0A high voltage schottky barrier diode. For use in low voltage, high frequency inverters, free wheeling and polarity protection applications
DIODS
SMB
2
-65°C
150°C
45K
223.
B1150S-3.03.0V 4.0A low dropout voltage regulator
BAYLI
TO-263
5
0°C
70°C
37K
224.
B1150S-3.33.3V 4.0A low dropout voltage regulator
BAYLI
TO-263
5
0°C
70°C
37K
225.
B1150S-55V 4.0A low dropout voltage regulator
BAYLI
TO-263
5
0°C
70°C
37K
226.
B1150T-1.51.5V 4.0A low dropout voltage regulator
BAYLI
TO-220
5
0°C
70°C
37K
227.
B1150T-2.52.5V 4.0A low dropout voltage regulator
BAYLI
TO-220
5
0°C
70°C
37K
228.
B1150T-3.03.0V 4.0A low dropout voltage regulator
BAYLI
TO-220
5
0°C
70°C
37K
229.
B1150T-3.33.3V 4.0A low dropout voltage regulator
BAYLI
TO-220
5
0°C
70°C
37K
230.
B1150T-3.33.3V 4.0A low dropout voltage regulator
BAYLI
TO-220
5
0°C
70°C
37K
231.
B1150T-55V 4.0A low dropout voltage regulator
BAYLI
TO-220
5
0°C
70°C
37K
232.
HSB1109Emitter to base voltage:5V 100mA PNP epitaxial planar transistor
HSMC
TO-126ML
3
-
-
33K
233.
HSB1109Emitter to base voltage:5V 100mA PNP epitaxial planar transistor
HSMC
TO-126ML
3
-
-
33K
234.
HSB1109SEmitter to base voltage:5V 100mA PNP epitaxial planar transistor for low frequency and high voltage amplifier applications
HSMC
-
3
-
-
36K
235.
SB110100V; 1.0A high voltage schottky barrier rectifier. For use in low voltage, high frequency inverters, free wheeling and polarity protection apllication
DIODS
-
2
-65°C
125°C
63K
236.
SB1100100 V, 1 A, schottky barrier rectifier
TRSYS
-
2
-50°C
125°C
145K
237.
SB1100S100 V, 1 A, schottky barrier rectifier
TRSYS
A-405
2
-50°C
125°C
145K
238.
TB1100H90V; 100A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction
DIODS
SMB
2
-40°C
150°C
184K
239.
TB1100L90V; 30A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction
DIODS
SMB
2
-40°C
150°C
190K
240.
TB1100M90V; 50A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction
DIODS
SMB
2
-40°C
150°C
187K
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