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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 121. | 1MB10-120 | Fuji discrete package IGBT | FUJI | - | 3 | - | - | 226K |
| 122. | 1MB10D-120 | Fuji discrete package IGBT | FUJI | - | 3 | - | - | 269K |
| 123. | MGRB1018 | Gallium arsenide power rectifier | MOT | D2PAK | 4 | -55°C | 175°C | 153K |
| 124. | MGRB1018 | Gallium arsenide power rectifier | MOT | D2PAK | 4 | -55°C | 175°C | 153K |
| 125. | MHPM6B10A120D | Hybrid power module | MOT | ISSUE B | 16 | -40°C | 150°C | 124K |
| 126. | MHPM6B10A120D | Hybrid power module | MOT | ISSUE B | 16 | -40°C | 150°C | 124K |
| 127. | MHPM6B10A60D | Hybrid power module | MOT | - | 16 | -40°C | 150°C | 166K |
| 128. | PB1008/S | Silicon bridge rectifier | DIO | - | 4 | -50°C | 150°C | 57K |
| 129. | PB1010/S | Silicon bridge rectifier | DIO | - | 4 | -50°C | 150°C | 57K |
| 130. | VHB10-12F | NPN silicon RF power transistor | ADVAN | - | 4 | -65°C | 200°C | 17K |
| 131. | VHB10-12S | NPN silicon RF power transistor | ADVAN | - | 4 | -65°C | 200°C | 16K |
| 132. | VHB10-28F | NPN silicon RF power transistor | ADVAN | - | 4 | -65°C | 200°C | 17K |
| 133. | VHB10-28S | NPN silicon RF power transistor | ADVAN | - | 4 | -65°C | 200°C | 17K |
| 134. | VHB100-12 | NPN silicon RF power transistor | ADVAN | - | 6 | -65°C | 200°C | 17K |
| 135. | VLB10-12F | NPN silicon RF power transistor | ADVAN | - | 4 | -65°C | 200°C | 17K |
| 136. | VLB10-12S | NPN silicon RF power transistor | ADVAN | - | 4 | -65°C | 200°C | 16K |
| 137. | VLB100-12 | NPN silicon RF power transistor | ADVAN | - | 4 | -65°C | 200°C | 18K |
| 138. | VMB10-12F | NPN silicon RF power transistor | ADVAN | - | 4 | -65°C | 200°C | 17K |
| 139. | VMB10-12S | NPN silicon RF power transistor | ADVAN | - | 4 | -65°C | 200°C | 16K |
| 140. | VMB100-12 | NPN silicon RF power transistor | ADVAN | - | 4 | -65°C | 200°C | 17K |
