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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 581. | Am29LV400B100EE | 4 Megabit (512 K x 8-bit/256 K x 16-bit) CMOS 3.0 volt-only boot sector flash memory, 100ns | AMD | TSOP | 48 | -55°C | 125°C | 519K |
| 582. | Am29LV400B100EE | 4 Megabit (512 K x 8-bit/256 K x 16-bit) CMOS 3.0 volt-only boot sector flash memory, 100ns | AMD | TSOP | 48 | -55°C | 125°C | 519K |
| 583. | Am29LV400B100FC | 4 Megabit (512 K x 8-bit/256 K x 16-bit) CMOS 3.0 volt-only boot sector flash memory, 100ns | AMD | TSOP | 48 | 0°C | 70°C | 519K |
| 584. | Am29LV400B100FE | 4 Megabit (512 K x 8-bit/256 K x 16-bit) CMOS 3.0 volt-only boot sector flash memory, 100ns | AMD | TSOP | 48 | -55°C | 125°C | 519K |
| 585. | Am29LV400B100FI | 4 Megabit (512 K x 8-bit/256 K x 16-bit) CMOS 3.0 volt-only boot sector flash memory, 100ns | AMD | TSOP | 48 | -40°C | 85°C | 519K |
| 586. | Am29LV400B100FI | 4 Megabit (512 K x 8-bit/256 K x 16-bit) CMOS 3.0 volt-only boot sector flash memory, 100ns | AMD | TSOP | 48 | -40°C | 85°C | 519K |
| 587. | Am29LV400B100SC | 4 Megabit (512 K x 8-bit/256 K x 16-bit) CMOS 3.0 volt-only boot sector flash memory, 100ns | AMD | SO | 44 | 0°C | 70°C | 519K |
| 588. | Am29LV400B100SI | 4 Megabit (512 K x 8-bit/256 K x 16-bit) CMOS 3.0 volt-only boot sector flash memory, 100ns | AMD | SO | 44 | -40°C | 85°C | 519K |
| 589. | Am29LV400B100WAC | 4 Megabit (512 K x 8-bit/256 K x 16-bit) CMOS 3.0 volt-only boot sector flash memory, 100ns | AMD | FBGA | 48 | 0°C | 70°C | 519K |
| 590. | Am29LV400B100WAI | 4 Megabit (512 K x 8-bit/256 K x 16-bit) CMOS 3.0 volt-only boot sector flash memory, 100ns | AMD | FBGA | 48 | -40°C | 85°C | 519K |
| 591. | DB100 | 50 V, 1.0 A dual-in-line glass passivated single phase bridge rectifier | SURGE | DIP | 4 | -55°C | 125°C | 75K |
| 592. | DB101 | 100 V, 1.0 A dual-in-line glass passivated single phase bridge rectifier | SURGE | DIP | 4 | -55°C | 125°C | 75K |
| 593. | DB1010 | 1000 V, 1.0 A dual-in-line glass passivated single phase bridge rectifier | SURGE | DIP | 4 | -55°C | 125°C | 75K |
| 594. | DB102 | 200 V, 1.0 A dual-in-line glass passivated single phase bridge rectifier | SURGE | DIP | 4 | -55°C | 125°C | 75K |
| 595. | DB104 | 400 V, 1.0 A dual-in-line glass passivated single phase bridge rectifier | SURGE | DIP | 4 | -55°C | 125°C | 75K |
| 596. | DB106 | 600 V, 1.0 A dual-in-line glass passivated single phase bridge rectifier | SURGE | DIP | 4 | -55°C | 125°C | 75K |
| 597. | DB108 | 800 V, 1.0 A dual-in-line glass passivated single phase bridge rectifier | SURGE | DIP | 4 | -55°C | 125°C | 75K |
| 598. | PHB100N03LT | 25 V, N-channel enhancement mode field-effect transistor | PHLPS | SOT | 3 | -55°C | 175°C | 331K |
| 599. | PHB10N40E | 400 V, power MOS transistor avalanche energy rated | PHLPS | SOT | 3 | -55°C | 150°C | 90K |
| 600. | UGB10BCT | Dual ultrafast soft recovery rectifier, 100V, 10A, 25ns | VISAY | TO-263AB | 3 | -40°C | 150°C | 46K |
| 601. | UGB10CCT | Dual ultrafast soft recovery rectifier, 150V, 10A, 25ns | VISAY | TO-263AB | 3 | -40°C | 150°C | 46K |
