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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 335 Displaying: 161 - 180# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | 161. | ACT-F1M32B-100F14I | High speed 32 Megabit boot block FLASH multichip module. Speed 100ns. | ACT | CQFP | 68 | -40°C | 85°C | 149K | 162. | ACT-F1M32B-100F14M | High speed 32 Megabit boot block FLASH multichip module. Speed 100ns. | ACT | CQFP | 68 | -55°C | 125°C | 149K | 163. | ACT-F1M32B-100F14Q | High speed 32 Megabit boot block FLASH multichip module. Speed 100ns. | ACT | CQFP | 68 | -55°C | 125°C | 149K | 164. | EPA160B-100F | 8-12V high efficiency heterojunction power FET | EXCEL | - | - | - | - | 30K | 165. | EPA240B-100F | 8-12V high efficiency heterojunction power FET | EXCEL | - | - | - | - | 30K | 166. | MH16D72AKLB-10 | 1207959552-bit (16777216-word by 72-bit) synchronous DRAM | MITS | TSOP | 168 | 0°C | 70°C | 354K | 167. | MH16S64FFB-10 | 1,073,741,824-bit (16,777,216-word by 64-bit) synchronous DRAM | MITS | - | - | 0°C | 70°C | 580K | 168. | MH16S64FFB-10L | 1,073,741,824-bit (16,777,216-word by 64-bit) synchronous DRAM | MITS | - | - | 0°C | 70°C | 580K | 169. | MH16S64PHB-10 | 1,073,741,824-bit (16,777,216-word by 64-bit) synchronous DRAM | MITS | - | - | 0°C | 70°C | 589K | 170. | MH16S72AKLB-10 | 1207959552-bit (16777216-word by 72-bit) synchronous dynamic RAM | MITS | TSOP | 184 | 0°C | 70°C | 348K | 171. | MH16S72PHB-10 | 1,207,959,552-bit (16,777,216-word by 72-bit) synchronous DRAM | MITS | - | - | 0°C | 70°C | 590K | 172. | MH32D72AKLB-10 | 2415919104-bit synchronous DRAM module | MITS | - | 184 | 0°C | 70°C | 358K | 173. | MH32S64PHB-10 | 2,147,483,648-bit (33,554,432-word by 64-bit) synchronous DRAM | MITS | - | - | 0°C | 70°C | 593K | 174. | MH32S64PHB-10 | 214683648-bit synchronous DRAM | MITS | TSOP | 168 | 0°C | 70°C | 593K | 175. | MH32S72PHB-10 | 2,415,919,104-bit (33,554,432-word by 72-bit) synchronous DRAM | MITS | - | - | 0°C | 70°C | 595K | 176. | MH32S72PHB-10 | 2415919104-bit synchronous DRAM | MITS | TSOP | 168 | 0°C | 70°C | 595K | 177. | MH8S64PHB-10 | 1073741824-bit synchronous DRAM | MITS | TSOP | 168 | 0°C | 70°C | 589K | 178. | MH8S72PHB-10 | 1207959552-bit synchronous DRAM | MITS | TSOP | 168 | 0°C | 70°C | 590K | 179. | TB-10.0 | 10.0 KV High-energy triggered spark gap | CPCLA | - | 2 | - | - | 77K | 180. | UPD71055GB-10 | 10 MHz parallel interface unit | NEC | PQFP | 44 | -40°C | 85°C | 486K |
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