We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet.com is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
All Data provided on this web site and the associated web pages is provided as is. It is intended to be for general information only, and is thus provided without any express or implied warranty or guarantee. It is the responsibility of the user or reader to ensure and confirm that this information is accurate and correct with the original publisher of the data sheet.
Most of the data sheets below are in the "pdf" format so it would be adviseable to use Adobe Acrobat Reader.
| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 81. | CXK58257AP-10L | 32768-word x 8-bit high speed CMOS static RAM, 100ns, standby 2.5uW | SONY | DIP | 28 | 0°C | 70°C | 291K |
| 82. | CXK58257AP-10LL | 32768-word x 8-bit high speed CMOS static RAM, 100ns, standby 1uW | SONY | DIP | 28 | 0°C | 70°C | 291K |
| 83. | CXK58257AP-12L | 32768-word x 8-bit high speed CMOS static RAM, 120ns, standby 2.5uW | SONY | DIP | 28 | 0°C | 70°C | 291K |
| 84. | CXK58257AP-12LL | 32768-word x 8-bit high speed CMOS static RAM, 120ns, standby 1uW | SONY | DIP | 28 | 0°C | 70°C | 291K |
| 85. | CXK58257AP-70L | 32768-word x 8-bit high speed CMOS static RAM, 70ns, standby 2.5uW | SONY | DIP | 28 | 0°C | 70°C | 291K |
| 86. | CXK58257AP-70LL | 32768-word x 8-bit high speed CMOS static RAM, 70ns, standby 1uW | SONY | DIP | 28 | 0°C | 70°C | 291K |
| 87. | HM6264AP-10 | 8192-word x 8-bit high speed CMOS static RAM, 100ns | HIT | PDIP | 28 | 0°C | 70°C | 54K |
| 88. | HM6264AP-12 | 8192-word x 8-bit high speed CMOS static RAM, 120ns | HIT | PDIP | 28 | 0°C | 70°C | 54K |
| 89. | HY62256AP-I-55 | 32Kx8bit CMOS SRAM, standby current=1mA, 55ns | HEI | PDIP | 28 | -40°C | 85°C | 820K |
| 90. | HY62256AP-I-70 | 32Kx8bit CMOS SRAM, standby current=1mA, 70ns | HEI | PDIP | 28 | -40°C | 85°C | 820K |
| 91. | JK1aP-12V | JK-relay. Slim type power relay. 1 form A. Coil voltage 12 V DC. Sealed type. High capacity (8A). | NAIS | - | 4 | -40°C | 70°C | 51K |
| 92. | JK1aP-3V | JK-relay. Slim type power relay. 1 form A. Coil voltage 3 V DC. Sealed type. High capacity (8A). | NAIS | - | 4 | -40°C | 70°C | 51K |
| 93. | JK1aP-5V | JK-relay. Slim type power relay. 1 form A. Coil voltage 5 V DC. Sealed type. High capacity (8A). | NAIS | - | 4 | -40°C | 70°C | 51K |
| 94. | JK1aP-6V | JK-relay. Slim type power relay. 1 form A. Coil voltage 6 V DC. Sealed type. High capacity (8A). | NAIS | - | 4 | -40°C | 70°C | 51K |
| 95. | JK1aP-9V | JK-relay. Slim type power relay. 1 form A. Coil voltage 9 V DC. Sealed type. High capacity (8A). | NAIS | - | 4 | -40°C | 70°C | 51K |
| 96. | PEEL22CV10AP-10 | 10ns CMOS programmable electrically erasable logic device | ICT | PDIP | 20 | 0°C | 70°C | 247K |
| 97. | PEEL22CV10AP-15 | 15ns CMOS programmable electrically erasable logic device | ICT | PDIP | 20 | 0°C | 70°C | 247K |
| 98. | PEEL22CV10AP-25 | 25ns CMOS programmable electrically erasable logic device | ICT | PDIP | 20 | 0°C | 70°C | 247K |
| 99. | PEEL22CV10AP-7 | 7ns CMOS programmable electrically erasable logic device | ICT | PDIP | 20 | 0°C | 70°C | 247K |
| 100. | W29C011AP-15 | 128K x 8 CMOS flash memory, 150ns | WBOND | PLCC | 32 | 0°C | 70°C | 153K |
