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Found: 200      Displaying: 161 - 180
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
161.
1SMA200Z200 V, 5 A, 1 W, surface mount silicon zener diode
TRSYS
DO-214AC
2
-55°C
150°C
301K
162.
ARA200A03RA-relay. Microwave relay for attenuator circuit. 2 form C. Coil voltage 3 V DC. Single side stable type. Surface-mount terminal.
NAIS
-
10
-40°C
85°C
199K
163.
ARA200A03RA-relay. Microwave relay for attenuator circuit. 2 form C. Coil voltage 3 V DC. Single side stable type. Surface-mount terminal.
NAIS
-
10
-40°C
85°C
199K
164.
ARA200A05RA-relay. Microwave relay for attenuator circuit. 2 form C. Coil voltage 5 V DC. Single side stable type. Surface-mount terminal.
NAIS
-
10
-40°C
85°C
199K
165.
ARA200A06RA-relay. Microwave relay for attenuator circuit. 2 form C. Coil voltage 6 V DC. Single side stable type. Surface-mount terminal.
NAIS
-
10
-40°C
85°C
199K
166.
ARA200A09RA-relay. Microwave relay for attenuator circuit. 2 form C. Coil voltage 9 V DC. Single side stable type. Surface-mount terminal.
NAIS
-
10
-40°C
85°C
199K
167.
ARA200A12RA-relay. Microwave relay for attenuator circuit. 2 form C. Coil voltage 12 V DC. Single side stable type. Surface-mount terminal.
NAIS
-
10
-40°C
85°C
199K
168.
ARA200A12RA-relay. Microwave relay for attenuator circuit. 2 form C. Coil voltage 12 V DC. Single side stable type. Surface-mount terminal.
NAIS
-
10
-40°C
85°C
199K
169.
ARA200A1HRA-relay. Microwave relay for attenuator circuit. 2 form C. Coil voltage 1.5 V DC. Single side stable type. Surface-mount terminal.
NAIS
-
10
-40°C
85°C
199K
170.
ARA200A48RA-relay. Microwave relay for attenuator circuit. 2 form C. Coil voltage 48 V DC. Single side stable type. Surface-mount terminal.
NAIS
-
10
-40°C
85°C
199K
171.
ARA200A4HRA-relay. Microwave relay for attenuator circuit. 2 form C. Coil voltage 4.5 V DC. Single side stable type. Surface-mount terminal.
NAIS
-
10
-40°C
85°C
199K
172.
T10A200BT10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 180V,max. Ir = 50uA @ Vr = 200V,max, Bulk (500pcs).
LIFUS
-
2
-40°C
150°C
68K
173.
T10A200TT10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 180V,max. Ir = 50uA @ Vr = 200V,max, Tape and reeled (1500pcs).
LIFUS
-
2
-40°C
150°C
68K
174.
TA20021803DH200V, 1800A phase control single thyristor
PWRX
-
-
-
-
473K
175.
TA20041603DH400V, 1600A phase control single thyristor
PWRX
-
-
-
-
482K
176.
TA20041803DH400V, 1800A phase control single thyristor
PWRX
-
-
-
-
473K
177.
TA20061603DH600V, 1600A phase control single thyristor
PWRX
-
-
-
-
482K
178.
TA20061803DH600V, 1800A phase control single thyristor
PWRX
-
-
-
-
473K
179.
TA20081603DH800V, 1600A phase control single thyristor
PWRX
-
-
-
-
482K
180.
TA20081803DH800V, 1800A phase control single thyristor
PWRX
-
-
-
-
473K
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