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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.

Found: 749      Displaying: 281 - 300
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
281.
CAT28F001NA-70BT70ns 1M-bit CMOS boot block flash memory
CTLST
PLCC
32
-40°C
105°C
108K
282.
CAT28F001NA-70TT70ns 1M-bit CMOS boot block flash memory
CTLST
PLCC
32
-40°C
105°C
108K
283.
CAT28F001PA-70BT70ns 1M-bit CMOS boot block flash memory
CTLST
PDIP
32
-40°C
105°C
108K
284.
CAT28F001PA-70TT70ns 1M-bit CMOS boot block flash memory
CTLST
PDIP
32
-40°C
105°C
108K
285.
CAT28F001TA-70BT70ns 1M-bit CMOS boot block flash memory
CTLST
TSOP
32
-40°C
105°C
108K
286.
CAT28F001TA-70TT70ns 1M-bit CMOS boot block flash memory
CTLST
TSOP
32
-40°C
105°C
108K
287.
CAT28F010NA-70T70ns 2M-bit CMOS flash memory
CTLST
PLCC
32
-40°C
105°C
100K
288.
CAT28F010PA-70T70ns 2M-bit CMOS flash memory
CTLST
PDIP
32
-40°C
105°C
100K
289.
CAT28F010TA-70T70ns 2M-bit CMOS flash memory
CTLST
TSOP
32
-40°C
105°C
100K
290.
CAT28F010TRA-70T70ns 2M-bit CMOS flash memory
CTLST
TSOP
32
-40°C
105°C
100K
291.
EFA018A-706-10V low distortion GaAs power FET
EXCEL
-
-
-
-
25K
292.
EFA025A-706-10V low distortion GaAs power FET
EXCEL
-
-
-
-
48K
293.
EFA040A-706-10V low distortion GaAs power FET
EXCEL
-
-
-
-
26K
294.
EFA080A-705-8V low distortion GaAs power FET
EXCEL
-
-
-
-
25K
295.
EPA018A-706-10V high efficiency heterojunction power FET
EXCEL
-
-
-
-
24K
296.
EPA025A-706-10V high efficiency heterojunction power FET
EXCEL
-
-
-
-
48K
297.
EPA040A-706-10V high efficiency heterojunction power FET
EXCEL
-
-
-
-
23K
298.
EPA080A-705-8V high efficiency heterojunction power FET
EXCEL
-
-
-
-
22K
299.
EPB025A-703-5V low noise high gain heterojunction power FET
EXCEL
-
-
-
-
26K
300.
SGA-7489DC-3000 MHz 5V silicon germanium HBT cascdeable gain block. High output intercept; +36 dBm typ. at 850 MHz.
STANF
-
4
-40°C
85°C
521K
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