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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 121. | 1N5956A | 1.5 W, silicon zener diode. Zener voltage 200 V. Test current 1.9 mA. +-10% tolerance. | JGD | - | 2 | -55°C | 175°C | 157K |
| 122. | 1N5956B | 1.5 W, silicon zener diode. Zener voltage 200 V. Test current 1.9 mA. +-5% tolerance. | JGD | - | 2 | -55°C | 175°C | 157K |
| 123. | 1N5956B | Pd=1.5W, Vz=200V zener diode | MCC | DO-41G | - | - | - | 124K |
| 124. | 1N5956B | 200 V, 1.5 W, glass passivated junction silicon zener diode | TEL | - | 2 | -55°C | 150°C | 204K |
| 125. | 1N5956B | 200 V, 1 A, 1.5 W, glass passivated junction silicon zener diode | TRSYS | - | 2 | -55°C | 150°C | 204K |
| 126. | 1N5956C | 1.5 W, silicon zener diode. Zener voltage 200 V. Test current 1.9 mA. +-2% tolerance. | JGD | - | 2 | -55°C | 175°C | 157K |
| 127. | 1N5956D | 1.5 W, silicon zener diode. Zener voltage 200 V. Test current 1.9 mA. +-1% tolerance. | JGD | - | 2 | -55°C | 175°C | 157K |
| 128. | 5962-9563901MGA | +-18V; precision, unity-gain differential amplifier. For summing and instrumentation amplifiers, balanced line receivers, current-voltage conversion, absolute volue amplifier | AD | Header | 8 | -50°C | 125°C | 292K |
| 129. | 5962H9563801QQC | Radiaton-Hardened 8-bit microcontroller: SMD. Total dose 1E6 rads(Si). Class Q. Lead finish gold. | UTMC | DIP | 40 | -55°C | 125°C | 137K |
| 130. | AD9560KN | 7V; 10mA; high speed monolithic pulse width modulator. For laser printers, gray scale capability | AD | DIP | 30 | 0°C | 70°C | 429K |
| 131. | AD9560KR | 7V; 10mA; high speed monolithic pulse width modulator. For laser printers, gray scale capability | AD | SOIC | 28 | 0°C | 70°C | 429K |
| 132. | AD9561JR | 7V; 10mA; pulse width modulator. For laser printers, digital copiers, color copiers | AD | SOIC | 28 | 0°C | 70°C | 266K |
| 133. | AD9561JR-REEL | 7V; 10mA; pulse width modulator. For laser printers, digital copiers, color copiers | AD | SOIC | 28 | 0°C | 70°C | 266K |
| 134. | MSU2956C40 | 40 MHZ 24 KB internal memory MCU | MOSEL | - | - | 0°C | 70°C | 68K |
| 135. | SI9956DY | 20 V, N-channel enhancement mode field-effect transistor | PHLPS | SOT | 8 | -55°C | 150°C | 253K |
| 136. | SMBJ5956A | 1.5W silicon surface mount zener diode. Zener voltage 200 V. Test current 1.9 mA. +-10% tolerance. | JGD | SMB/DO-214AA | 2 | -55°C | 200°C | 184K |
| 137. | SMBJ5956B | 1.5W silicon surface mount zener diode. Zener voltage 200 V. Test current 1.9 mA. +-5% tolerance. | JGD | SMB/DO-214AA | 2 | -55°C | 200°C | 184K |
| 138. | SMBJ5956C | 1.5W silicon surface mount zener diode. Zener voltage 200 V. Test current 1.9 mA. +-2% tolerance. | JGD | SMB/DO-214AA | 2 | -55°C | 200°C | 184K |
| 139. | SMBJ5956D | 1.5W silicon surface mount zener diode. Zener voltage 200 V. Test current 1.9 mA. +-1% tolerance. | JGD | SMB/DO-214AA | 2 | -55°C | 200°C | 184K |
| 140. | V956E | Diode capacitance:56pF; VBR:1.0V min; 400mW; ultra-low leakage abrupt varactor diode | KNOX | DO-7 | - | -65°C | 150°C | 34K |
