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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 101. | 1N4947G | Glass passivated fast recovery rectifier. Maximum recurrent peak reverse voltage 800 V. Maximum average forward rectified current 1.0 A. | BYTES | - | 2 | -65°C | 175°C | 153K |
| 102. | 1N4947G | 800 V, 1 A glass passivated fast recovery rectifier | FORMO | - | 2 | -65°C | 175°C | 33K |
| 103. | 1N4947GP | 1.0A, 800V ultra fast recovery rectifier | MCC | - | - | - | - | 81K |
| 104. | 1N5947A | 82 V, 1.5 W silicon zener diode | EIC | - | 2 | -55°C | 175°C | 15K |
| 105. | 1N5947A | 1.5 W, silicon zener diode. Zener voltage 82 V. Test current 4.6 mA. +-10% tolerance. | JGD | - | 2 | -55°C | 175°C | 157K |
| 106. | 1N5947A | 1.5 W, silicon zener diode. Zener voltage 82 V. Test current 4.6 mA. +-10% tolerance. | JGD | - | 2 | -55°C | 175°C | 157K |
| 107. | 1N5947B | 1.5 W, silicon zener diode. Zener voltage 82 V. Test current 4.6 mA. +-5% tolerance. | JGD | - | 2 | -55°C | 175°C | 157K |
| 108. | 1N5947B | Pd=1.5W, Vz=82V zener diode | MCC | DO-41G | - | - | - | 124K |
| 109. | 1N5947B | Pd=1.5W, Vz=82V zener diode | MCC | DO-41G | - | - | - | 124K |
| 110. | 1N5947B | Glass passivated junction silicon zener diode. Power 1.5Watts. Nominal zener voltage Vz @ Izt = 82V. Test current Izt = 4.6 mA. | PAJIT | - | 2 | -55°C | 150°C | 81K |
| 111. | 1N5947B | 82 V, 1.5 W, glass passivated junction silicon zener diode | TEL | - | 2 | -55°C | 150°C | 204K |
| 112. | 1N5947B | 82 V, 1 A, 1.5 W, glass passivated junction silicon zener diode | TRSYS | - | 2 | -55°C | 150°C | 204K |
| 113. | 1N5947C | 1.5 W, silicon zener diode. Zener voltage 82 V. Test current 4.6 mA. +-2% tolerance. | JGD | - | 2 | -55°C | 175°C | 157K |
| 114. | 1N5947D | 1.5 W, silicon zener diode. Zener voltage 82 V. Test current 4.6 mA. +-1% tolerance. | JGD | - | 2 | -55°C | 175°C | 157K |
| 115. | 1SMB5947A | 82 V, 1.5 W silicon zener diode | EIC | SMB | 2 | -55°C | 150°C | 15K |
| 116. | 49470 | Dual winding surface mount inductor. Nominal inductance (10kHz,100mV 1&3, 2&4) 47uH. | CANDD | - | 4 | -40°C | 85°C | -- |
| 117. | DMF3947-103 | Chip on board mixer quad (to 6 GHz) | ALPHA | - | - | -55°C | 150°C | 33K |
| 118. | KF947FU | Cellular Phone | KEC | - | - | - | - | 246K |
| 119. | NTE947D | Integrated circuit. Dual operational amplifier. | NTE | DIP | 14 | 0°C | 70°C | 29K |
| 120. | V947E | Diode capacitance:47pF; VBR:1.0V min; 400mW; ultra-low leakage abrupt varactor diode | KNOX | DO-7 | - | -65°C | 150°C | 34K |
