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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 381. | 28C64AJC-1 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 120 ns. | TURBO | PLCC | 32 | 0°C | 70°C | 42K |
| 382. | 28C64AJC-2 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 150 ns. | TURBO | PLCC | 32 | 0°C | 70°C | 42K |
| 383. | 28C64AJC-3 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. | TURBO | PLCC | 32 | 0°C | 70°C | 42K |
| 384. | 28C64AJC-4 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. | TURBO | PLCC | 32 | 0°C | 70°C | 42K |
| 385. | 28C64AJI-1 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 120 ns. | TURBO | PLCC | 32 | -40°C | 85°C | 42K |
| 386. | 28C64APC-1 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 120 ns. | TURBO | PDIP | 28 | 0°C | 70°C | 42K |
| 387. | 28C64APC-2 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 150 ns. | TURBO | PDIP | 28 | 0°C | 70°C | 42K |
| 388. | 28C64APC-3 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. | TURBO | PDIP | 28 | 0°C | 70°C | 42K |
| 389. | 28C64APC-4 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. | TURBO | PDIP | 28 | 0°C | 70°C | 42K |
| 390. | 28C64API-1 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 120 ns. | TURBO | PDIP | 28 | -40°C | 85°C | 42K |
| 391. | 28C64API-2 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 150 ns. | TURBO | PDIP | 28 | -40°C | 85°C | 42K |
| 392. | 28C64API-3 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. | TURBO | PDIP | 28 | -40°C | 85°C | 42K |
| 393. | 28C64API-4 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. | TURBO | PDIP | 28 | -40°C | 85°C | 42K |
| 394. | 28C64APM-1 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 120 ns. | TURBO | PDIP | 28 | -55°C | 125°C | 42K |
| 395. | 28C64APM-2 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 150 ns. | TURBO | PDIP | 28 | -55°C | 125°C | 42K |
| 396. | 28C64APM-3 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. | TURBO | PDIP | 28 | -55°C | 125°C | 42K |
| 397. | 28C64APM-4 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. | TURBO | PDIP | 28 | -55°C | 125°C | 42K |
| 398. | MT28C6428P20FM-85B | Low voltage, extended temperature flash and SRAM COMBO memory | MICRN | FBGA | 67 | -40°C | 85°C | 571K |
| 399. | MT28C6428P20FM-85BET | Low voltage, extended temperature flash and SRAM COMBO memory | MICRN | FBGA | 67 | -40°C | 85°C | 571K |
| 400. | MT28C6428P20FM-85T | Low voltage, extended temperature flash and SRAM COMBO memory | MICRN | FBGA | 67 | -40°C | 85°C | 571K |
