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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 281. | 1N5817L | Schottky barrier rectifier. Maximum recurrent peak reverse voltage 20 V. Maximum average forward rectified current 1.0 A. | BYTES | - | 2 | -65°C | 125°C | 152K |
| 282. | GS8170DW18C-333I | 333MHz 1M x 18 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | -40°C | 85°C | 906K |
| 283. | GS8170LW18C-250 | 250MHz 1M x 18 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | 0°C | 70°C | 877K |
| 284. | GS8170LW18C-250I | 250MHz 1M x 18 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | -40°C | 85°C | 877K |
| 285. | GS8170LW18C-300 | 300MHz 1M x 18 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | 0°C | 70°C | 877K |
| 286. | GS8170LW18C-300I | 300MHz 1M x 18 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | -40°C | 85°C | 877K |
| 287. | GS8170LW18C-333 | 333MHz 1M x 18 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | 0°C | 70°C | 877K |
| 288. | GS8170LW18C-333I | 333MHz 1M x 18 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | -40°C | 85°C | 877K |
| 289. | GS8170LW36C-250 | 250MHz 512K x 36 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | 0°C | 70°C | 877K |
| 290. | GS8170LW36C-250I | 250MHz 512K x 36 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | -40°C | 85°C | 877K |
| 291. | GS8170LW36C-300 | 300MHz 512K x 36 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | 0°C | 70°C | 877K |
| 292. | GS8170LW36C-300I | 300MHz 512K x 36 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | -40°C | 85°C | 877K |
| 293. | GS8170LW36C-333 | 333MHz 512K x 36 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | 0°C | 70°C | 877K |
| 294. | GS8170LW36C-333I | 333MHz 512K x 36 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | -40°C | 85°C | 877K |
| 295. | GS8170LW72C-250 | 250MHz 256K x 72 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | 0°C | 70°C | 877K |
| 296. | GS8170LW72C-250I | 250MHz 256K x 72 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | -40°C | 85°C | 877K |
| 297. | GS8170LW72C-300 | 300MHz 256K x 72 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | 0°C | 70°C | 877K |
| 298. | GS8170LW72C-300I | 300MHz 256K x 72 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | -40°C | 85°C | 877K |
| 299. | GS8170LW72C-333 | 333MHz 256K x 72 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | 0°C | 70°C | 877K |
| 300. | GS8170LW72C-333I | 333MHz 256K x 72 18MB double late write sigmaRAM SRAM | GSITE | BGA | 209 | -40°C | 85°C | 877K |
