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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 801. | BS616LV8011AC | 70/100ns 40mA 2.7-3.6V ultra low power/voltage CMOS SRAM 512K x 16bit | BSI | BGA | 48 | 0°C | 70°C | 192K |
| 802. | BS616LV8011AI | 70/100ns 40mA 2.7-3.6V ultra low power/voltage CMOS SRAM 512K x 16bit | BSI | BGA | 48 | -40°C | 85°C | 192K |
| 803. | BS616LV8012BC | 70/100ns 20-45mA 2.4-5.5V ultra low power/voltage CMOS SRAM 512K x 16bit | BSI | BGA | 48 | 0°C | 70°C | 207K |
| 804. | BS616LV8012BI | 70/100ns 20-45mA 2.4-5.5V ultra low power/voltage CMOS SRAM 512K x 16bit | BSI | BGA | 48 | -40°C | 85°C | 207K |
| 805. | BS616LV8013BC | 70/100ns 20mA 2.4-3.6V ultra low power/voltage CMOS SRAM 512K x 16bit | BSI | BGA | 48 | 0°C | 70°C | 203K |
| 806. | BS616LV8013BI | 70/100ns 20mA 2.4-3.6V ultra low power/voltage CMOS SRAM 512K x 16bit | BSI | BGA | 48 | -40°C | 85°C | 203K |
| 807. | BS616LV8015BC | 55/70ns 50mA 4.5-5.5V ultra low power/voltage CMOS SRAM 512K x 16bit | BSI | BGA | 48 | 0°C | 70°C | 204K |
| 808. | BS616LV8015BI | 55/70ns 50mA 4.5-5.5V ultra low power/voltage CMOS SRAM 512K x 16bit | BSI | BGA | 48 | -40°C | 85°C | 204K |
| 809. | ER801A | 150 V, 8 A, superfast recovery rectifier | TRSYS | TO-220AC | 2 | -55°C | 150°C | 164K |
| 810. | ER801AD | 150 V, 8 A, D2PAK surface mount superfast recovery rectifier | TRSYS | TO-263 | 4 | -55°C | 150°C | 147K |
| 811. | ER801AF | 150 V, 8 A, isolation superfast recovery rectifier | TRSYS | TO-220AC | 2 | -55°C | 150°C | 164K |
| 812. | ER801D | 100 V, 8 A, D2PAK surface mount superfast recovery rectifier | TRSYS | TO-263 | 4 | -55°C | 150°C | 147K |
| 813. | ER801F | 100 V, 8 A, isolation superfast recovery rectifier | TRSYS | TO-220AC | 2 | -55°C | 150°C | 164K |
| 814. | FR801R | Fast recovery rectifier. Case negative. Maximum recurrent peak reverse voltage 50V. Maximum average forward rectified current 8.0A. | BYTES | TO-220A | 2 | -65°C | 150°C | 160K |
| 815. | GS88019AT-166I | 166MHz 512K x 18 9Mb sync burst SRAM | GSITE | TQFP | 100 | -40°C | 85°C | 901K |
| 816. | GS88019AT-200I | 200MHz 512K x 18 9Mb sync burst SRAM | GSITE | TQFP | 100 | -40°C | 85°C | 901K |
| 817. | GS88019AT-225I | 225MHz 512K x 18 9Mb sync burst SRAM | GSITE | TQFP | 100 | -40°C | 85°C | 901K |
| 818. | GS88019AT-250I | 250MHz 512K x 18 9Mb sync burst SRAM | GSITE | TQFP | 100 | -40°C | 85°C | 901K |
| 819. | HER801R | High efficiency rectifier. Case negative. Maximum recurrent peak reverse voltage 50 V. Maximum average forward rectified current 8.0 A. | BYTES | TO-220A | 3 | -55°C | 150°C | 162K |
| 820. | RS801M | Single phase bridge rectifier. Maximum recurrent peak reverse voltage 50 V. Maximum average forward rectified current 8.0 A. | BYTES | RS-8M | 4 | -65°C | 150°C | 148K |
