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Found: 410      Displaying: 341 - 360
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
341.
M2S56D30ATP-75AL265M double data rate SDRAM, 32M x 8 organization, 7.5ns, Vcc=2.3-2.7, low power
MITS
TSOP II
66
0°C
70°C
768K
342.
MAS1175AASM1-TIC for 10.00 - 20.00 MHz VCTCXO
MASOY
MSOP
10
-35°C
85°C
89K
343.
MAS1175ATB1IC for 10.00 - 20.00 MHz VCTCXO
MASOY
Tested wafers
-
-35°C
85°C
89K
344.
MAS9275ATC1IC for 10.00 - 30.00 MHz VCXO
MASOY
Wafer EWS-tested
7
-30°C
85°C
32K
345.
MAS9275ATG1IC for 10.00 - 30.00 MHz VCXO
MASOY
Wafer EWS-tested
7
-30°C
85°C
32K
346.
MDU3C-75A2Delay 75 +/-3.7 ns, triple, HCMOS-interfaced fixed delay line
DADD
Gull Wing
14
0°C
70°C
53K
347.
MDU3C-75A2Delay 75 +/-3.7 ns, triple, HCMOS-interfaced fixed delay line
DADD
Gull Wing
14
0°C
70°C
53K
348.
P4KE75A-T3Reverse stand-off voltage: 64.10V transient voltage suppressor
WTE
-
2
-65°C
175°C
67K
349.
P4KE75A-T3Reverse stand-off voltage: 64.10V transient voltage suppressor
WTE
-
2
-65°C
175°C
67K
350.
P4KE75A-TBReverse stand-off voltage: 64.10V transient voltage suppressor
WTE
-
2
-65°C
175°C
67K
351.
P4KE75A-TBReverse stand-off voltage: 64.10V transient voltage suppressor
WTE
-
2
-65°C
175°C
67K
352.
P4SMAJ75A-T1Reverse stand-off voltage: 75.00V surface mount transient voltage suppressor
WTE
SMA
2
-55°C
150°C
65K
353.
P4SMAJ75A-T1Reverse stand-off voltage: 75.00V surface mount transient voltage suppressor
WTE
SMA
2
-55°C
150°C
65K
354.
P4SMAJ75A-T3Reverse stand-off voltage: 75.00V surface mount transient voltage suppressor
WTE
SMA
2
-55°C
150°C
65K
355.
P4SMAJ75A-T3Reverse stand-off voltage: 75.00V surface mount transient voltage suppressor
WTE
SMA
2
-55°C
150°C
65K
356.
P4SMAJ75A-T3Reverse stand-off voltage: 75.00V surface mount transient voltage suppressor
WTE
SMA
2
-55°C
150°C
65K
357.
P6KE75A-T3Reverse stand-off voltage: 64.10V, 600W transient voltage suppressor
WTE
DO-15
2
-65°C
175°C
62K
358.
P6KE75A-TBReverse stand-off voltage: 64.10V, 600W transient voltage suppressor
WTE
DO-15
2
-65°C
175°C
62K
359.
PD45128168G5-A75A-9JF128M-bit synchronous DRAM 4-bank, LVTTL; MOS integrated circuit
ELPID
TSOP
54
-
-
682K
360.
PD45128441G5-A75A-9JF128M-bit synchronous DRAM 4-bank, LVTTL; MOS integrated circuit
ELPID
TSOP
54
-
-
682K
361.
TMC1175AM7C20Linearity error 0.5 % Time conversion 40 ms Bits number of 8 Power Ptot 210 mW
FAIR
SMD
-
-
-
707K
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