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GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.

Found: 1079      Displaying: 861 - 880
#
Part:
Description:
Manuf.
Package
Pins
T°min
T°max
PDF size
861.
2N3700UBChip: geometry 4500; polarity PNP
SECOA
-
-
-
-
31K
862.
2N3700UBChip: 7.0V; 1.0A; geometry 4500; polarity NPN
SECOA
Cersot
3
-55°C
200°C
46K
863.
2N700060 V, N-channel enhancement
TRSYS
-
3
-55°C
150°C
288K
864.
2N700260V; N-channel enchancement mode field effect transistor
DIODS
SOT-23
3
-55°C
150°C
55K
865.
2N7002-0160V; 115mA N-channel enchancement mode field effect transistor
DIODS
SOT-23
3
-55°C
150°C
63K
866.
2N7002DW60V; dual N-channel enchancement mode field effect transistor
DIODS
SOT-363
6
-55°C
150°C
66K
867.
2N7002LT160 V, N-Channel enhancement
TRSYS
SOT-23
3
-55°C
150°C
343K
868.
2N7002T60V; 15mA N-channel enchancement mode field effect transistor
DIODS
SOT-523
3
-55°C
150°C
85K
869.
2N7002W60V; N-channel enchancement mode field effect transistor
DIODS
SOT-323
3
-55°C
150°C
68K
870.
H2N7000200mA N-channel enchancement mode transistor for high voltage, high speed applications such as switching regulators, converters
HSMC
-
3
-
-
41K
871.
L2N7002LT160 V, 115 mA, small signal MOSFET
LRC
SOT-23
3
-55°C
150°C
149K
872.
L2N7002LT360 V, 115 mA, small signal MOSFET
LRC
SOT-23
3
-55°C
150°C
149K
873.
MMBD7000-7100V; dual surface mount switching diode. General purpose switching application
DIODS
SOT-23
3
-65°C
150°C
151K
874.
MMBD7000LT1100 V, dual switching diode
LRC
SOT-23
3
-55°C
150°C
53K
875.
MMBV3700LT1200 V, silicon pin diode
LRC
SOT-23
3
-
-
57K
876.
MMVL3700T120 V, high voltage silicon pin diode
LRC
SOD-323
2
-
-
75K
877.
SC12-700-100700 V, 12 A, silicon controlled rectifier
TRSYS
TO-220
3
-40°C
110°C
765K
878.
TR16-700-125700 V, 16 A, silicon triac
TRSYS
TO-220
3
-40°C
110°C
63K
879.
TR2.5-700-14700 V, 2.5 A, silicon triac
TRSYS
TO-220
3
-40°C
110°C
333K
880.
TR8-700-70700 V, 8 A, silicon triac
TRSYS
TO-220
3
-40°C
110°C
146K
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