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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
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Why GetDatasheet.com ?
We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 73 Displaying: 41 - 60| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 41. | 1417-12A | 12 W, 28 V, 1400-1700 MHz common base transistor | GHZ | 55LV | 3 | - | - | 68K | | 42. | 2CW37-12A | Planar zener diode. Zener voltage Vz = 11.40-12.20 V. Zener current Iz = 5 mA. | SSE | DO-35 | 2 | -55°C | 175°C | 21K | | 43. | 2CW37-12B | Planar zener diode. Zener voltage Vz = 12-12.7 V. Zener current Iz = 5 mA. | SSE | DO-35 | 2 | -55°C | 175°C | 21K | | 44. | DSA17-12A | 1200V rectifier diode, avalanche diode | IXYS | DO-203AA | 2 | -40°C | 180°C | 37K | | 45. | DSAI17-12A | 1200V rectifier diode, avalanche diode | IXYS | DO-203AA | 2 | -40°C | 180°C | 37K | | 46. | HY17-12 | 90 degree hybrid 1.71-1.88 GHz | ALPHA | SOIC | 8 | -40°C | 85°C | 50K | | 47. | P4C147-12PC | 12 ns,Static CMOS RAM, 4 K x 1 ultra high speed | PERF | DIP | 18 | 0°C | 70°C | 59K | | 48. | P4C187-12JC | 12 ns,static CMOS RAM, 64 K x 1 ultra high speed | PERF | SOJ | 24 | 0°C | 70°C | 70K | | 49. | P4C187-12JI | 12 ns,static CMOS RAM, 64 K x 1 ultra high speed | PERF | SOJ | 24 | -40°C | 85°C | 70K | | 50. | P4C187-12PC | 12 ns,static CMOS RAM, 64 K x 1 ultra high speed | PERF | DIP | 22 | 0°C | 70°C | 70K | | 51. | P4C187-12PI | 12 ns,static CMOS RAM, 64 K x 1 ultra high speed | PERF | DIP | 22 | -40°C | 85°C | 70K | | 52. | P4C187-12PI | 12 ns,static CMOS RAM, 64 K x 1 ultra high speed | PERF | DIP | 22 | -40°C | 85°C | 70K | | 53. | TMS4257-12FMS | 262144-bit dynamic random-access memory, 120ns | TI | FM | 16 | -55°C | 100°C | 1M | | 54. | TMS4257-12FMS | 262144-bit dynamic random-access memory, 120ns | TI | FM | 16 | -55°C | 100°C | 1M | | 55. | TMS4257-12SDE | 262144-bit dynamic random-access memory, 120ns | TI | SD | 16 | -40°C | 85°C | 1M | | 56. | TMS4257-12SDE | 262144-bit dynamic random-access memory, 120ns | TI | SD | 16 | -40°C | 85°C | 1M | | 57. | TMS4257-12SDL | 262144-bit dynamic random-access memory, 120ns | TI | SD | 16 | 0°C | 70°C | 1M | | 58. | TMS4257-12SDS | 262144-bit dynamic random-access memory, 120ns | TI | SD | 16 | -55°C | 100°C | 1M | | 59. | TMS4257-12SDS | 262144-bit dynamic random-access memory, 120ns | TI | SD | 16 | -55°C | 100°C | 1M | | 60. | VBE17-12NO7 | 1200V ECO-PAC single phase rectifier bridge | IXYS | - | 4 | -40°C | 150°C | 181K | | 61. | W27E257-12 | 32K x 8 electrically erasable EPROM, 120ns | WBOND | DIP | 28 | 0°C | 70°C | 227K |
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