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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 281. | 28C256ATC-1 | High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | TSOP | 28 | 0°C | 70°C | 41K |
| 282. | 28C256ATC-2 | High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | TSOP | 28 | 0°C | 70°C | 41K |
| 283. | 28C256ATC-2 | High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | TSOP | 28 | 0°C | 70°C | 41K |
| 284. | 28C256ATC-3 | High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | TSOP | 28 | 0°C | 70°C | 41K |
| 285. | 28C256ATC-4 | High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | TSOP | 28 | 0°C | 70°C | 41K |
| 286. | 28C256ATI-1 | High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | TSOP | 28 | -40°C | 85°C | 41K |
| 287. | 28C256ATI-2 | High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | TSOP | 28 | -40°C | 85°C | 41K |
| 288. | 28C256ATI-3 | High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | TSOP | 28 | -40°C | 85°C | 41K |
| 289. | 28C256ATI-4 | High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | TSOP | 28 | -40°C | 85°C | 41K |
| 290. | 28C256ATM-1 | High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | TSOP | 28 | -55°C | 125°C | 41K |
| 291. | 28C256ATM-2 | High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | TSOP | 28 | -55°C | 125°C | 41K |
| 292. | 28C256ATM-3 | High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | TSOP | 28 | -55°C | 125°C | 41K |
| 293. | 28C256ATM-4 | High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | TSOP | 28 | -55°C | 125°C | 41K |
| 294. | HY62256AT1-55 | 32Kx8bit CMOS SRAM, standby current=1mA, 55ns | HEI | TSOP I | 28 | 0°C | 70°C | 820K |
| 295. | HY62256AT1-70 | 32Kx8bit CMOS SRAM, standby current=1mA, 70ns | HEI | TSOP I | 28 | 0°C | 70°C | 820K |
| 296. | HY62256AT1-85 | 32Kx8bit CMOS SRAM, standby current=1mA, 85ns | HEI | TSOP I | 28 | 0°C | 70°C | 820K |
| 297. | HY62256AT1-I-55 | 32Kx8bit CMOS SRAM, standby current=1mA, 55ns | HEI | TSOP I | 28 | -40°C | 85°C | 820K |
| 298. | HY62256AT1-I-70 | 32Kx8bit CMOS SRAM, standby current=1mA, 70ns | HEI | TSOP I | 28 | -40°C | 85°C | 820K |
| 299. | HY62256AT1-I-85 | 32Kx8bit CMOS SRAM, standby current=1mA, 85ns | HEI | TSOP I | 28 | -40°C | 85°C | 820K |
| 300. | ZC836ATA | 28 V, silicon hyperabrupt varactor diode | ZETEX | SOT | 3 | -55°C | 150°C | 140K |
| 301. | ZC836ATA | 28 V, silicon hyperabrupt varactor diode | ZETEX | SOT | 3 | -55°C | 150°C | 140K |
