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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 21. | 6A10 | Silicon rectifier. Case molded plastic. Maximum recurrent peak reverse voltage 1000 V. Maximum average forward rectified current 6.0 A. | BYTES | R-6 | 2 | -65°C | 150°C | 150K |
| 22. | 6A10 | 1000V; 6.0A silicon rectifier; high current capability and low surge and forward voltage drop | DIODS | R-6 | 2 | -65°C | 150°C | 62K |
| 23. | 6A10 | 1000 V, 6 A silicon rectifier | FORMO | R | 4 | -65°C | 175°C | 34K |
| 24. | 6A10 | 1000 V, 6 A, General purpose plastic rectifier | GODAR | R-6 | 2 | -50°C | 150°C | 198K |
| 25. | 6A10 | 1000 V, 6 A silicon rectifier | INVAC | R | 2 | -50°C | 150°C | 94K |
| 26. | 6A10 | 6.0A, 1000V ultra fast recovery rectifier | MCC | R-6 | - | - | - | 82K |
| 27. | 6A10 | 100 V, 6.0 A silicon rectifier | SURGE | R | 2 | -65°C | 125°C | 125K |
| 28. | 6A10G | 1000 V, 6 A, Glass passivated junction rectifier | GODAR | R-6 | 2 | -55°C | 175°C | 164K |
| 29. | 6A1G | 100 V, 6 A, Glass passivated junction rectifier | GODAR | R-6 | 2 | -55°C | 175°C | 164K |
| 30. | MID-56A19 | T-1 3/4 package PIN photodiode | UOT | plastic | 2 | -55°C | 100°C | 37K |
| 31. | MT48LC1M16A1TG-6 | 512 K x 16 x 2banks, 166MHz synchronous DRAM | MICRN | TSOP | 50 | 0°C | 70°C | 1M |
| 32. | MT48LC1M16A1TG-7S | 512 K x 16 x 2banks, 143MHz synchronous DRAM | MICRN | TSOP | 50 | 0°C | 70°C | 1M |
| 33. | MT48LC1M16A1TG-7SIT | 512 K x 16 x 2banks, 143MHz synchronous DRAM | MICRN | TSOP | 50 | 0°C | 70°C | 1M |
| 34. | MT48LC1M16A1TG-8A | 512 K x 16 x 2banks, 125MHz synchronous DRAM | MICRN | TSOP | 50 | 0°C | 70°C | 1M |
| 35. | MT48LC1M16A1TGS-6 | 512K x 16 x 2 banks SDRAM, 6ns | MICRN | TSOP | 50 | 0°C | 70°C | 1M |
| 36. | MT48LC1M16A1TGS-7 | 512K x 16 x 2 banks SDRAM, 7ns | MICRN | TSOP | 50 | 0°C | 70°C | 1M |
| 37. | MT48LC1M16A1TGS-8A | 512K x 16 x 2 banks SDRAM, 7ns | MICRN | TSOP | 50 | 0°C | 70°C | 1M |
| 38. | ZXMN6A11GFTA | 60 V N-channel enhancement mode mosfet | ZETEX | SOT | 3 | -55°C | 150°C | 1M |
| 39. | ZXMN6A11GFTA | 60 V N-channel enhancement mode mosfet | ZETEX | SOT | 3 | -55°C | 150°C | 1M |
| 40. | ZXMN6A11GFTC | 60 V N-channel enhancement mode mosfet | ZETEX | SOT | 3 | -55°C | 150°C | 1M |
| 41. | ZXMN6A11GFTC | 60 V N-channel enhancement mode mosfet | ZETEX | SOT | 3 | -55°C | 150°C | 1M |
