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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 61. | 5962F9689103QXA | Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish solder. Total dose 3E5 rads(Si). | UTMC | FlatPack | 28 | -55°C | 125°C | 69K |
| 62. | 5962F9689103QXA | Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish solder. Total dose 3E5 rads(Si). | UTMC | FlatPack | 28 | -55°C | 125°C | 69K |
| 63. | 5962F9689103QXA | Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish solder. Total dose 3E5 rads(Si). | UTMC | FlatPack | 28 | -55°C | 125°C | 69K |
| 64. | 5962F9689103QXX | Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish optional. Total dose 3E5 rads(Si). | UTMC | FlatPack | 28 | -55°C | 125°C | 69K |
| 65. | 5962F9689103QYA | Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish solder. Total dose 3E5 rads(Si). | UTMC | DIP | 28 | -55°C | 125°C | 69K |
| 66. | 5962F9689103QYC | Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 3E5 rads(Si). | UTMC | DIP | 28 | -55°C | 125°C | 69K |
| 67. | 5962F9689103QYX | Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish optional. Total dose 3E5 rads(Si). | UTMC | DIP | 28 | -55°C | 125°C | 69K |
| 68. | 5962F9689103QYX | Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish optional. Total dose 3E5 rads(Si). | UTMC | DIP | 28 | -55°C | 125°C | 69K |
| 69. | 5962F9689103VXC | Radiation-hardenet 32K x 8 PROM: SMD. Class V. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 3E5 rads(Si). | UTMC | FlatPack | 28 | -55°C | 125°C | 69K |
| 70. | 5962F9689103VYA | Radiation-hardenet 32K x 8 PROM: SMD. Class V. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish solder. Total dose 3E5 rads(Si). | UTMC | DIP | 28 | -55°C | 125°C | 69K |
| 71. | BA6890FP | 4-channel H-bridge type BTL driver | ROHM | HSOP | 28 | -30°C | 85°C | 175K |
| 72. | BF689K | 25 V, NPN 2 GHz wideband transistor | PHLPS | SOT | 3 | - | - | 27K |
| 73. | FDS6892A | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET | FAIR | - | - | - | - | 80K |
| 74. | FDS6892AZ | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET | FAIR | - | - | - | - | 78K |
| 75. | FDS6894A | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET | FAIR | - | - | - | - | 82K |
| 76. | FDS6898A | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET | FAIR | - | - | - | - | 81K |
| 77. | FDS6898A | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET | FAIR | - | - | - | - | 81K |
| 78. | FDS6898AZ | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET | FAIR | - | - | - | - | 77K |
| 79. | L6895-10 | Forward current:60mA; 5V; high power infrared LED with miniature package. For rotary encoders, etc | HAMAM | - | 2 | -25°C | 85°C | 193K |
| 80. | ZTX689B | NPN silicon planar medium power high gain transistor | ZETEX | - | 3 | -55°C | 200°C | 66K |
| 81. | ZTX689B | NPN silicon planar medium power high gain transistor | ZETEX | - | 3 | -55°C | 200°C | 66K |
