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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 21. | 2N6517 | NPN Epitaxial Silicon Transistor - High Voltage Transistor | FAIR | - | - | - | - | 26K |
| 22. | 2N6517 | Ic=500mA, Vce=10V transistor | MCC | - | - | - | - | 427K |
| 23. | 2N6517 | High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW. | USHA | - | 3 | 0°C | 150°C | 47K |
| 24. | 5962H9651701QCC | RadHard MSI: SMD. Hex inverter. Class Q, QML. Lead finish gold. Total dose 1E6 rads(Si). | UTMC | Ceramic DIP | 14 | -55°C | 125°C | 10M |
| 25. | 5962H9651701QCX | RadHard MSI: SMD. Hex inverter. Class Q, QML. Lead finish optional. Total dose 1E6 rads(Si). | UTMC | Ceramic DIP | 14 | -55°C | 125°C | 10M |
| 26. | 5962H9651701VCA | RadHard MSI: SMD. Hex inverter. Class V, QML. Lead finish solder. Total dose 1E6 rads(Si). | UTMC | Ceramic DIP | 14 | -55°C | 125°C | 10M |
| 27. | 5962H9651701VCC | RadHard MSI: SMD. Hex inverter. Class V, QML. Lead finish gold. Total dose 1E6 rads(Si). | UTMC | Ceramic DIP | 14 | -55°C | 125°C | 10M |
| 28. | 5962H9651701VXA | RadHard MSI: SMD. Hex inverter. Class V, QML. Lead finish solder. Total dose 1E6 rads(Si). | UTMC | Ceramic flatpack | 14 | -55°C | 125°C | 10M |
| 29. | 5962H9651701VXA | RadHard MSI: SMD. Hex inverter. Class V, QML. Lead finish solder. Total dose 1E6 rads(Si). | UTMC | Ceramic flatpack | 14 | -55°C | 125°C | 10M |
| 30. | 5962H9651701VXC | RadHard MSI: SMD. Hex inverter. Class V, QML. Lead finish gold. Total dose 1E6 rads(Si). | UTMC | Ceramic flatpack | 14 | -55°C | 125°C | 10M |
| 31. | 5962R9651701VCA | RadHard MSI: SMD. Hex inverter. Class V, QML. Lead finish solder. Total dose 1E5 rads(Si). | UTMC | Ceramic DIP | 14 | -55°C | 125°C | 10M |
| 32. | H2N6517 | 500mA NPN epitaxial planar transistor for general purpose applications requiring high breakdown voltages | HSMC | - | 3 | - | - | 41K |
| 33. | HMBT6517 | Emitter to base voltage:5V; 250mA NPN epitaxial planar transistor for general purpose applications | HSMC | SOT-23 | 3 | - | - | 31K |
| 34. | LA6517 | 2-output power operational amplifier | SANYO | DIP | 8 | -20°C | 75°C | 120K |
| 35. | LA6517 | 2-output power operational amplifier | SANYO | DIP | 8 | -20°C | 75°C | 120K |
| 36. | LA6517M | 2-output power operational amplifier | SANYO | MFP16FS | 16 | -20°C | 75°C | 120K |
| 37. | MMBT6517LT1 | 350 V, high voltage transistor | LRC | SOT-23 | 3 | -55°C | 150°C | 169K |
| 38. | MPS6517 | 4V, 350mW PNP silicon planar epitaxial transistor | ME | TO-92A | 3 | -55°C | 150°C | 173K |
| 39. | SN65176B | Differential BUS transceiver | TI | P | 8 | -40°C | 105°C | 171K |
| 40. | SN65176B | Differential BUS transceiver | TI | P | 8 | -40°C | 105°C | 171K |
