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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 141. | 5962H9651601QCA | RadHard MSI: SMD. Hex inverter. Class Q, QML. Lead finish solder. Total dose 1E6 rads(Si). | UTMC | Ceramic DIP | 14 | -55°C | 125°C | 10M |
| 142. | 5962H9651601QCC | RadHard MSI: SMD. Hex inverter. Class Q, QML. Lead finish gold. Total dose 1E6 rads(Si). | UTMC | Ceramic DIP | 14 | -55°C | 125°C | 10M |
| 143. | 5962H9651601QCC | RadHard MSI: SMD. Hex inverter. Class Q, QML. Lead finish gold. Total dose 1E6 rads(Si). | UTMC | Ceramic DIP | 14 | -55°C | 125°C | 10M |
| 144. | 5962H9651601QXA | RadHard MSI: SMD. Hex inverter. Class Q, QML. Lead finish solder. Total dose 1E6 rads(Si). | UTMC | Ceramic flatpack | 14 | -55°C | 125°C | 10M |
| 145. | 5962H9651601QXX | RadHard MSI: SMD. Hex inverter. Class Q, QML. Lead finish optional. Total dose 1E6 rads(Si). | UTMC | Ceramic flatpack | 14 | -55°C | 125°C | 10M |
| 146. | 5962H9651601VCA | RadHard MSI: SMD. Hex inverter. Class V, QML. Lead finish solder. Total dose 1E6 rads(Si). | UTMC | Ceramic DIP | 14 | -55°C | 125°C | 10M |
| 147. | 5962H9651601VCC | RadHard MSI: SMD. Hex inverter. Class V, QML. Lead finish gold. Total dose 1E6 rads(Si). | UTMC | Ceramic DIP | 14 | -55°C | 125°C | 10M |
| 148. | 5962H9651601VCX | RadHard MSI: SMD. Hex inverter. Class V, QML. Lead finish optional. Total dose 1E6 rads(Si). | UTMC | Ceramic DIP | 14 | -55°C | 125°C | 10M |
| 149. | 5962H9651601VXA | RadHard MSI: SMD. Hex inverter. Class V, QML. Lead finish solder. Total dose 1E6 rads(Si). | UTMC | Ceramic flatpack | 14 | -55°C | 125°C | 10M |
| 150. | 5962H9651601VXC | RadHard MSI: SMD. Hex inverter. Class V, QML. Lead finish gold. Total dose 1E6 rads(Si). | UTMC | Ceramic flatpack | 14 | -55°C | 125°C | 10M |
| 151. | 5962R9651601VCC | RadHard MSI: SMD. Hex inverter. Class V, QML. Lead finish gold. Total dose 1E5 rads(Si). | UTMC | Ceramic DIP | 14 | -55°C | 125°C | 10M |
| 152. | HM5165165J-6 | 64M EDO DRAM (4-Mword x 16-bit), 60ns | HIT | SOJ | 50 | 0°C | 70°C | 585K |
| 153. | HM5165165LJ-5 | 64M EDO DRAM (4-Mword x 16-bit), 50ns | HIT | SOJ | 50 | 0°C | 70°C | 585K |
| 154. | HM5165165LJ-6 | 64M EDO DRAM (4-Mword x 16-bit), 60ns | HIT | SOJ | 50 | 0°C | 70°C | 585K |
| 155. | HM5165165LTT-5 | 64M EDO DRAM (4-Mword x 16-bit), 50ns | HIT | TSOP II | 50 | 0°C | 70°C | 585K |
| 156. | HM5165165LTT-6 | 64M EDO DRAM (4-Mword x 16-bit), 60ns | HIT | TSOP II | 50 | 0°C | 70°C | 585K |
| 157. | HM5165165TT-5 | 64M EDO DRAM (4-Mword x 16-bit), 50ns | HIT | TSOP II | 50 | 0°C | 70°C | 585K |
| 158. | HM5165165TT-6 | 64M EDO DRAM (4-Mword x 16-bit), 60ns | HIT | TSOP II | 50 | 0°C | 70°C | 585K |
| 159. | STR-F6516 | SMPS primary IC, 450V, 190W | SNKEN | - | 5 | -20°C | 125°C | 191K |
