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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 21. | 1N6163 | Transient Voltage Suppressor | MSEMI | G | - | - | - | 104K |
| 22. | 1N6163 | 1500W BI-polarity transient voltage suppressor | SEMTE | Small | 2 | -65°C | 175°C | 111K |
| 23. | 1N6163A | Transient Voltage Suppressor | MSEMI | G | - | - | - | 104K |
| 24. | 1N6163A | QPL 1500 watt axial leaded TVS | SEMTE | Glass | 2 | -65°C | 175°C | 31K |
| 25. | 1N6163AUS | Transient Voltage Suppressor | MSEMI | G_SQ._MELF | - | - | - | 104K |
| 26. | 1N6163US | Transient Voltage Suppressor | MSEMI | G_SQ._MELF | - | - | - | 104K |
| 27. | ATF-36163-BLK | 1.5-18GHz surface mount pseudomorphic HEMT | HP | SOT-363 | 6 | - | - | 96K |
| 28. | ATF-36163-TR1 | 1.5-18GHz surface mount pseudomorphic HEMT | HP | SOT-363 | 6 | - | - | 96K |
| 29. | IDT74FST16163213PA | 24-bit bus exchange switch | IDT | TSSOP | 56 | -40°C | 85°C | 82K |
| 30. | IDT74FST16163213PV | 24-bit bus exchange switch | IDT | SSOP | 56 | -40°C | 85°C | 82K |
| 31. | K4H561638B-TCA2 | 256 Mb DDR SDRAM. Version 0.3, 133 MHz, speed 7.5ns@CL2. | SMSNG | TSOP-II | 66 | 0°C | 70°C | 658K |
| 32. | K4H561638B-TLA2 | 256 Mb DDR SDRAM. Version 0.3, 133 MHz, speed 7.5ns@CL2. | SMSNG | TSOP-II | 66 | 0°C | 70°C | 658K |
| 33. | K4S561632A-TC/L1H | 4M x 16bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 100 MHz (CL=2), interface LVTTL. | SMSNG | TSOP (II) | 54 | 0°C | 70°C | 127K |
| 34. | K4S561632A-TC/L1L | 4M x 16bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 100 MHz (CL=3), interface LVTTL. | SMSNG | TSOP (II) | 54 | 0°C | 70°C | 127K |
| 35. | K4S561632A-TC/L75 | 4M x 16bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 133 MHz (CL=3), interface LVTTL. | SMSNG | TSOP (II) | 54 | 0°C | 70°C | 127K |
| 36. | K4S561632A-TC/L80 | 4M x 16bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 125 MHz (CL=3), interface LVTTL. | SMSNG | TSOP (II) | 54 | 0°C | 70°C | 127K |
| 37. | K4S561632B-TC/L1H | 4M x 16bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 100 MHz (CL=2), interface LVTTL. | SMSNG | TSOP (II) | 54 | 0°C | 70°C | 131K |
| 38. | K4S561632B-TC/L1L | 4M x 16bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 100 MHz (CL=3), interface LVTTL. | SMSNG | TSOP (II) | 54 | 0°C | 70°C | 131K |
| 39. | K4S561632B-TC/L75 | 4M x 16bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 133 MHz (CL=3), interface LVTTL. | SMSNG | TSOP (II) | 54 | 0°C | 70°C | 131K |
| 40. | NJL6163R | High speed pin photo diode | NJRC | __ | 2 | -30°C | 85°C | 80K |
