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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 1021. | BS616UV8011FI | 70/100ns 15-20mA 1.8-2.3V ultra low power/voltage CMOS SRAM 512K x 16bit | BSI | BGA | 48 | -40°C | 85°C | 221K |
| 1022. | BS616UV8020BC | 70/100ns 15-20mA 1.8-3.6V ultra low power/voltage CMOS SRAM 512K x 16 or 1M x 18bit switchable | BSI | BGA | 48 | 0°C | 70°C | 207K |
| 1023. | BS616UV8020BI | 70/100ns 15-20mA 1.8-3.6V ultra low power/voltage CMOS SRAM 512K x 16 or 1M x 18bit switchable | BSI | BGA | 48 | -40°C | 85°C | 207K |
| 1024. | BS616UV8021BC | 70/100ns 15-20mA 1.8-2.3V ultra low power/voltage CMOS SRAM 512K x 16 or 1M x 8bit switchable | BSI | BGA | 48 | 0°C | 70°C | 215K |
| 1025. | BS616UV8021BI | 70/100ns 15-20mA 1.8-2.3V ultra low power/voltage CMOS SRAM 512K x 16 or 1M x 8bit switchable | BSI | BGA | 48 | -40°C | 85°C | 215K |
| 1026. | BS616UV8021DC | 70/100ns 15-20mA 1.8-2.3V ultra low power/voltage CMOS SRAM 512K x 16 or 1M x 8bit switchable | BSI | DICE | 48 | 0°C | 70°C | 215K |
| 1027. | BS616UV8021DI | 70/100ns 15-20mA 1.8-2.3V ultra low power/voltage CMOS SRAM 512K x 16 or 1M x 8bit switchable | BSI | DICE | 48 | -40°C | 85°C | 215K |
| 1028. | BS616UV8021FC | 70/100ns 15-20mA 1.8-2.3V ultra low power/voltage CMOS SRAM 512K x 16 or 1M x 8bit switchable | BSI | BGA | 48 | 0°C | 70°C | 215K |
| 1029. | BS616UV8021FI | 70/100ns 15-20mA 1.8-2.3V ultra low power/voltage CMOS SRAM 512K x 16 or 1M x 8bit switchable | BSI | BGA | 48 | -40°C | 85°C | 215K |
| 1030. | EM566168 | 55ns 1M x 16 pseudo SRAM | ETRON | BGA | 48 | 0°C | 70°C | 146K |
| 1031. | HSD1616A | Emitter to base voltage:6V 1A NPN epitaxial planar transistor for audio frequency power amplifier and medium speed switching applications | HSMC | - | 3 | - | - | 39K |
| 1032. | IC62VV25616L-55B | 55ns; 1.8V; 256K x 16 ultra low power CMOS static RAM | ICSI | BGA | 44 | 0°C | 70°C | 321K |
| 1033. | IC62VV25616L-55BI | 55ns; 1.8V; 256K x 16 ultra low power CMOS static RAM | ICSI | BGA | 44 | -40°C | 85°C | 321K |
| 1034. | IC62VV25616L-55T | 55ns; 1.8V; 256K x 16 ultra low power CMOS static RAM | ICSI | TSOP | 44 | 0°C | 70°C | 321K |
| 1035. | IC62VV25616L-55T | 55ns; 1.8V; 256K x 16 ultra low power CMOS static RAM | ICSI | TSOP | 44 | 0°C | 70°C | 321K |
| 1036. | IC62VV25616L-55TI | 55ns; 1.8V; 256K x 16 ultra low power CMOS static RAM | ICSI | TSOP | 44 | -40°C | 85°C | 321K |
| 1037. | IC62VV25616L-70B | 70ns; 1.8V; 256K x 16 ultra low power CMOS static RAM | ICSI | BGA | 44 | 0°C | 70°C | 321K |
| 1038. | IC62VV25616L-70BI | 70ns; 1.8V; 256K x 16 ultra low power CMOS static RAM | ICSI | BGA | 44 | -40°C | 85°C | 321K |
| 1039. | IC62VV25616L-70TI | 70ns; 1.8V; 256K x 16 ultra low power CMOS static RAM | ICSI | TSOP | 44 | -40°C | 85°C | 321K |
| 1040. | TYN616RG | Thyristors, 16A, 600V | STM | - | 3 | -40°C | 125°C | 92K |
