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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 241. | HV9606DB1 | Current mode PWM controller with supervisor | SUTEX | DIP | 20 | -40°C | 85°C | 147K |
| 242. | HV9606SP | 250V current mode PWM controller with supervisor | SUTEX | SSOP | 20 | -40°C | 85°C | 565K |
| 243. | HV9606X | 250V current mode PWM controller with supervisor | SUTEX | - | - | -40°C | 85°C | 565K |
| 244. | NDB6060L | Length/Height 4.69 mm Width 10.54 mm Depth 15.49 mm Power dissipation 100 W Transistor polarity N Channel Current Id cont. 48 A Voltage Vgs th max. 2 V (D2-Pak) Voltage Vds max 60 V | FAIR | TO-263 | - | - | - | 361K |
| 245. | RBV606D | 600 V, 6 A, silicon bridge rectifier | EIC | RBV25 | 4 | -40°C | 150°C | 42K |
| 246. | SF1606G | Reverse voltage: 400.00V; 16A super-fast glass passivated rectifier | WTE | TO-220A | 2 | -65°C | 150°C | 46K |
| 247. | SF1606G | Reverse voltage: 400.00V; 16A super-fast glass passivated rectifier | WTE | TO-220A | 2 | -65°C | 150°C | 46K |
| 248. | STU6062 | Working peak reverse voltage: 50.2 V, 1 mA, 600 W surface mount transient voltage suppressor | EIC | SMB | 2 | -55°C | 150°C | 28K |
| 249. | STU6068 | Working peak reverse voltage: 55.1 V, 1 mA, 600 W surface mount transient voltage suppressor | EIC | SMB | 2 | -55°C | 150°C | 28K |
| 250. | STU606I | Working peak reverse voltage: 5.50 V, 10 mA, 600 W surface mount transient voltage suppressor | EIC | SMB | 2 | -55°C | 150°C | 28K |
| 251. | TN0606N3 | 60V N-channel enhancement-mode vertical DMOS FET | SUTEX | - | 3 | -55°C | 150°C | 31K |
| 252. | TN0606N5 | 100V N-channel enhancement-mode vertical DMOS FET | SUTEX | TO-220 | 3 | -55°C | 150°C | 31K |
| 253. | TP0606N3 | 60V P-channel enhancement-mode vertical DMOS FET | SUTEX | - | 3 | -55°C | 150°C | 454K |
| 254. | VN0606L | 60V N-channel enhancement-mode vertical DMOS FET | SUTEX | - | 3 | -55°C | 150°C | 434K |
| 255. | VTB6061 | Process photodiode. Isc = 350 microA, Voc = 490 mV at H = 100 fc, 2850 K. | PERK | TO-8 | 2 | -40°C | 110°C | 31K |
| 256. | VTB6061B | Process photodiode. Isc = 35 microA, Voc = 420 mV at H = 100 fc, 2850 K. | PERK | TO-8 | 2 | -40°C | 110°C | 31K |
| 257. | VTB6061CIE | Process photodiode. Sp = 120 nA/fc at H = 1.0fc, Sp = 11nA/lux at H = 1.0 lux. | PERK | TO-8 | 2 | -54°C | 50°C | 30K |
| 258. | VTB6061J | Process photodiode. Isc = 350 microA, Voc = 490 mV at H = 100 fc, 2850 K. | PERK | TO-8 | 2 | -40°C | 110°C | 33K |
| 259. | VTB6061UV | Process photodiode. Isc = 350 microA, Voc = 490 mV at H = 100 fc, 2850 K. | PERK | TO-8 | 3 | -40°C | 110°C | 33K |
| 260. | VTB6061UVJ | Process photodiode. Isc = 350 microA, Voc = 490 mV at H = 100 fc, 2850 K. | PERK | TO-8 | 3 | -40°C | 110°C | 32K |
| 261. | VTP6060 | Process photodiodes | PERK | TO-8 | 2 | -40°C | 110°C | 30K |
