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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 400 Displaying: 181 - 200| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 181. | 2606B | Return-path photodiode receiver module. Connector: none | AGERE | DIL | 14 | -40°C | 85°C | 47K | | 182. | CEB6060L | N-channel logic level enhancement mode field effect transistor | CETSE | TO-263 | 3 | -65°C | 175°C | 516K | | 183. | CEB6060LR | N-channel logic level enhancement mode field effect transistor | CETSE | TO-263 | 3 | -65°C | 175°C | 534K | | 184. | CEB6060R | N-channel logic level enhancement mode field effect transistor | CETSE | TO-263 | 3 | -65°C | 175°C | 527K | | 185. | CEP6060L | N-channel logic level enhancement mode field effect transistor | CETSE | TO-220 | 3 | -65°C | 175°C | 516K | | 186. | CEP6060LR | N-channel logic level enhancement mode field effect transistor | CETSE | TO-220 | 3 | -65°C | 175°C | 534K | | 187. | CEP6060R | N-channel logic level enhancement mode field effect transistor | CETSE | TO-220 | 3 | -65°C | 175°C | 527K | | 188. | MA4P606-131 | 1000 V, PIN diode chip | MACOM | - | - | -65°C | 175°C | 506K | | 189. | OM6060SB | 800V N-channel MOSFET | OMNI | Hermetic | 3 | -55°C | 150°C | 29K | | 190. | OM6061SB | 1000V N-channel MOSFET | OMNI | Hermetic | 3 | -55°C | 150°C | 29K | | 191. | OPB606A | Reflective object sensor | OPTEK | - | 4 | -40°C | 85°C | 225K | | 192. | OPB606B | Reflective object sensor | OPTEK | - | 4 | -40°C | 85°C | 225K | | 193. | OPB606C | Reflective object sensor | OPTEK | - | 4 | -40°C | 85°C | 225K | | 194. | RL1606C | Glass passivated silicon rectifier. Max recurrent peak reverse voltage 800V, max RMS bridge input voltage 560V, max DC blocking voltage 800V. Max average forward rectified current 16.0A at Tc=100degC. | RECTR | TO-220 | 4 | -65°C | 150°C | 26K | | 195. | RL1606CS | Glass passivated silicon rectifier. Max recurrent peak reverse voltage 800V, max RMS voltage 560V, max DC blocking voltage 800V. Max average forward rectified current 16.0A at Tc=100degC. | RECTR | D2PAK | 3 | -65°C | 150°C | 23K | | 196. | RS606M | Single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 800V, max RMS bridge input voltage 560V, max DC blocking voltage 800V. Max average forward rectified output current 6.0A at Tc=100degC | RECTR | RS-6M | 4 | -55°C | 150°C | 23K | | 197. | ZR36060 | Integrated JPEG CODEC | ZORAN | PQFP | 100 | 0°C | 70°C | 307K | | 198. | ZR36060 | Integrated JPEG CODEC | ZORAN | PQFP | 100 | 0°C | 70°C | 307K | | 199. | ZR36067 | AV PCI controller | ZORAN | PQFP | 208 | 0°C | 70°C | 580K | | 200. | ZR36067 | AV PCI controller | ZORAN | PQFP | 208 | 0°C | 70°C | 580K |
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