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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 101. | 2N5989 | NPN power transistor for use in general-purpose amplifier and switching, 40V, 12A | MOT | TO-225AB | 3 | -55°C | 150°C | 257K |
| 102. | 5962-9559801MRA | 7.5V; 0.9-1.3mW; 250MHz demodulating logarithmic amplifier. For IF/RF signal processing, received signal strength indicator (RSSI), high speed signal compression | AD | CERDIP | 20 | -55°C | 125°C | 269K |
| 103. | AD598AD | OutputV:+-11V; operateV:13-36V; 1.2W; LVDT signal conditioner | AD | CERDIP | 20 | -40°C | 85°C | 447K |
| 104. | AD598JR | OutputV:+-11V; operateV:13-36V; 1.2W; LVDT signal conditioner | AD | SOIC | 20 | 0°C | 70°C | 447K |
| 105. | CXA2598M | PDIC for CD-R/RW | SONY | - | - | - | - | 71K |
| 106. | HM5259805BTD-75 | 512M LVTTL interface SDRAM, 133 MHz | ELPID | TSOP II | 54 | 0°C | 70°C | 368K |
| 107. | HM5259805BTD-A6 | 512M LVTTL interface SDRAM, 100 MHz | ELPID | TSOP II | 54 | 0°C | 70°C | 368K |
| 108. | LTC1598CG | 8-channel, micropower sampling 12-bit serial I/O A/D converter | LINER | SSOP | 24 | 0°C | 70°C | 791K |
| 109. | NTE5980 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 50V. Average forward current 40A. | NTE | - | 2 | -65°C | 175°C | 26K |
| 110. | NTE5982 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 40A. | NTE | - | 2 | -65°C | 175°C | 26K |
| 111. | NTE5982 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 40A. | NTE | - | 2 | -65°C | 175°C | 26K |
| 112. | NTE5983 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 40A. | NTE | - | 2 | -65°C | 175°C | 26K |
| 113. | NTE5986 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 40A. | NTE | - | 2 | -65°C | 175°C | 26K |
| 114. | NTE5988 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 40A. | NTE | - | 2 | -65°C | 175°C | 26K |
| 115. | NTE5989 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 40A. | NTE | - | 2 | -65°C | 175°C | 26K |
| 116. | PCF8598C-2P | 1024 x 8-bit CMOS EEPROMs with I2C-bus interface | PHLPS | DIP | 8 | -40°C | 85°C | 126K |
| 117. | PCF8598C-2P | 1024 x 8-bit CMOS EEPROMs with I2C-bus interface | PHLPS | DIP | 8 | -40°C | 85°C | 126K |
| 118. | R5983 | Spectral responce:185-710nm; between anode and cathode:1250Vdc; 0.1mA; photomultiplier tube | HAMAM | - | 11 | -30°C | 50°C | 152K |
| 119. | R5983P | Spectral responce:185-710nm; between anode and cathode:1250Vdc; 0.1mA; photomultiplier tube | HAMAM | - | 11 | -30°C | 50°C | 152K |
| 120. | R5984 | Spectral responce:185-900nm; between anode and cathode:1250Vdc; 0.1mA; photomultiplier tube | HAMAM | - | 11 | -30°C | 50°C | 153K |
