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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 81. | 1N5985B | 500 milliwatts glass silicon zener diode, zener voltage 2.4V | MOT | DO-204AH | 2 | -65°C | 200°C | 424K |
| 82. | 1N5986B | 500 milliwatts glass silicon zener diode, zener voltage 2.7V | MOT | DO-204AH | 2 | -65°C | 200°C | 424K |
| 83. | 1N5987B | 500 milliwatts glass silicon zener diode, zener voltage 3V | MOT | DO-204AH | 2 | -65°C | 200°C | 424K |
| 84. | 1N5988B | 500 milliwatts glass silicon zener diode, zener voltage 3.3V | MOT | DO-204AH | 2 | -65°C | 200°C | 424K |
| 85. | 1N5989B | 500 milliwatts glass silicon zener diode, zener voltage 3.6V | MOT | DO-204AH | 2 | -65°C | 200°C | 424K |
| 86. | DCR5980Z12 | 1200V phase control thyristor | DYNEX | - | 2 | - | - | 126K |
| 87. | DCR5980Z14 | 1400V phase control thyristor | DYNEX | - | 2 | - | - | 126K |
| 88. | DCR5980Z16 | 1600V phase control thyristor | DYNEX | - | 2 | - | - | 126K |
| 89. | DCR5980Z18 | 1800V phase control thyristor | DYNEX | - | 2 | - | - | 126K |
| 90. | HM5259805BTD-75 | 512M; 133MHz LVTTL interface SDRAM | ELPID | TQFP | 54 | - | - | 368K |
| 91. | HM5259805BTD-A6 | 512M; 100MHz LVTTL interface SDRAM | ELPID | TQFP | 54 | - | - | 368K |
| 92. | MAX4598C/D | Low-voltage, CMOS analog IC, combination single-ended 8-to-1/differential 4-to-1 multiplexer. | MAXIM | Dice | - | 0°C | 70°C | 130K |
| 93. | MAX4598CPP | Low-voltage, CMOS analog IC, combination single-ended 8-to-1/differential 4-to-1 multiplexer. | MAXIM | Plastic DIP | 20 | 0°C | 70°C | 130K |
| 94. | MAX4598EAP | Low-voltage, CMOS analog IC, combination single-ended 8-to-1/differential 4-to-1 multiplexer. | MAXIM | SSOP | 20 | -40°C | 85°C | 130K |
| 95. | MAX4598EPP | Low-voltage, CMOS analog IC, combination single-ended 8-to-1/differential 4-to-1 multiplexer. | MAXIM | Plastic DIP | 20 | -40°C | 85°C | 130K |
| 96. | MAX4598EWP | Low-voltage, CMOS analog IC, combination single-ended 8-to-1/differential 4-to-1 multiplexer. | MAXIM | Wide SO | 20 | -40°C | 85°C | 130K |
| 97. | NTE5981 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 40A. | NTE | - | 2 | -65°C | 175°C | 26K |
| 98. | OP598A | NPN silicon phototransistor | OPTEK | TO-18 | 2 | -40°C | 100°C | 470K |
| 99. | OP598B | NPN silicon phototransistor | OPTEK | TO-18 | 2 | -40°C | 100°C | 470K |
| 100. | OP598C | NPN silicon phototransistor | OPTEK | TO-18 | 2 | -40°C | 100°C | 470K |
