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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 61. | 1N4589R | 300V, 150A general purpose single diode | PWRX | - | - | - | - | 640K |
| 62. | AD589JH | OutputV:1.235V; 125mW; 10mA; 2-terminal IC 1.2V reference | AD | DIP | 8 | -55°C | 150°C | 80K |
| 63. | CMX589AD2 | GMSK modem | CML | SOIC | 24 | -40°C | 85°C | 1M |
| 64. | CMX589AD5 | GMSK modem | CML | SSOP | 24 | -40°C | 85°C | 1M |
| 65. | CMX589AE2 | GMSK modem | CML | TSOP | 24 | -40°C | 85°C | 1M |
| 66. | CMX589AP4 | GMSK modem | CML | PDIP | 24 | -40°C | 85°C | 1M |
| 67. | CMX589AP4 | High speed GMSK modem | MXCOM | PDIP | 24 | -40°C | 85°C | 208K |
| 68. | MAX4589CAP | Low-voltage, high-isolation, dual 2-channel RF and video multiplexer. | MAXIM | SSOP | 20 | 0°C | 70°C | 309K |
| 69. | MAX4589CWP | Low-voltage, high-isolation, dual 2-channel RF and video multiplexer. | MAXIM | Wide SO | 20 | 0°C | 70°C | 309K |
| 70. | MAX4589EPP | Low-voltage, high-isolation, dual 2-channel RF and video multiplexer. | MAXIM | Plastic DIP | 20 | -40°C | 85°C | 309K |
| 71. | NTE5890 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 12A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 72. | NTE5892 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 50V. Average forward current 16A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 73. | NTE5893 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 16A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 74. | NTE5895 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 16A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 75. | NTE5896 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 16A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 76. | NTE5896 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 16A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 77. | NTE5897 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 16A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 78. | NTE5898 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 16A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 79. | NTE5899 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 16A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 80. | SDA9589X | High-end picture-in-picture ICs | IMET | PDSO | 28 | 0°C | 70°C | 2M |
