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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 81. | AD586JN | InputV:36V; 500mW; outputV:4.980-5.020V; 3mA; to ground:60mA; high precision 5V amplifier | AD | DIP | 8 | 0°C | 70°C | 241K |
| 82. | AD586JQ | InputV:36V; 500mW; outputV:4.980-5.020V; 3mA; to ground:60mA; high precision 5V amplifier | AD | DIP | 8 | 0°C | 70°C | 241K |
| 83. | AD586JR | InputV:36V; 500mW; outputV:4.980-5.020V; 3mA; to ground:60mA; high precision 5V amplifier | AD | SOIC | 8 | 0°C | 70°C | 241K |
| 84. | AD586KN | InputV:36V; 500mW; outputV:4.980-5.020V; 3mA; to ground:60mA; high precision 5V amplifier | AD | DIP | 8 | 0°C | 70°C | 241K |
| 85. | B1586D-1.5 | 1.5V 1.5A low dropout voltage regulator | BAYLI | TO-252 | 3 | 0°C | 70°C | 35K |
| 86. | B1586D-2.5 | 2.5V 1.5A low dropout voltage regulator | BAYLI | TO-252 | 3 | 0°C | 70°C | 35K |
| 87. | B1586D-3.0 | 3.0V 1.5A low dropout voltage regulator | BAYLI | TO-252 | 3 | 0°C | 70°C | 35K |
| 88. | B1586D-3.3 | 3.3V 1.5A low dropout voltage regulator | BAYLI | TO-252 | 3 | 0°C | 70°C | 35K |
| 89. | B1586D-5 | 5V 1.5A low dropout voltage regulator | BAYLI | TO-252 | 3 | 0°C | 70°C | 35K |
| 90. | B1586D-ADJ | Adjustable 1.5A low dropout voltage regulator | BAYLI | TO-252 | 3 | 0°C | 70°C | 35K |
| 91. | NTE5860 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 92. | NTE5862 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 93. | NTE5863 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 94. | NTE5864 | Silicon power rectifier diode. Cathode to case. Peak reverse voltage 200V. Max forward current 30A. | NTE | DO4 | 2 | -40°C | 175°C | 15K |
| 95. | NTE5865 | Silicon power rectifier diode. Anode to case. Peak reverse voltage 200V. Max forward current 30A. | NTE | DO4 | 2 | -40°C | 175°C | 15K |
| 96. | NTE5866 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 97. | NTE5867 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 98. | NTE5868 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 99. | NTE5869 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
| 100. | TDA8586Q | 18 V, power amplifier with load detectin | PHLPS | DBS | 17 | -40°C | 150°C | 150K |
