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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 41. | 1N5822 | Schottky barrier rectifier. Maximum recurrent peak reverse voltage 40 V. Maximum average forward rectified current 3.0 A. | BYTES | DO-27 | 2 | -65°C | 125°C | 151K |
| 42. | 1N5822 | Schottky barrier rectifier. Maximum repetitive peak reverse voltage VRRM = 40 V. Maximum forward average rectified current IAV = 3.0 A. | CNEL | - | 2 | -65°C | 125°C | 169K |
| 43. | 1N5822 | 40V; 3.0A schottky barrier rectifier. For use in low voltage, high frequency inverters, free wheeling and polarity protection application | DIODS | - | 2 | -65°C | 125°C | 51K |
| 44. | 1N5822 | 40 V, 3.0 A schottky barrier rectifier diode | EIC | - | 2 | -65°C | 125°C | 28K |
| 45. | 1N5822 | 40 V, 3 A schottky barrier rectifier | FORMO | DO-27 | 2 | -65°C | 125°C | 32K |
| 46. | 1N5822 | 40 V, 3 A, Schottky barrier rectifier | GODAR | DO | 2 | -65°C | 125°C | 183K |
| 47. | 1N5822 | 40V, 3.0A schottky barrier rectifier | LITON | - | 2 | -55°C | 125°C | 33K |
| 48. | 1N5822 | 40 V, 3 A, schottky barrier diode | LRC | DO | 2 | - | - | 54K |
| 49. | 1N5822 | 3.0A, 40V ultra fast recovery rectifier | MCC | - | - | - | - | 46K |
| 50. | 1N5822 | 3 Ampere schottky barrier rectifier. Maximum recurrent peak reverse voltage 40V. Maximum average forward rectified current 3.0A | PAJIT | - | 2 | -55°C | 125°C | 55K |
| 51. | 1N5822 | Schottky barrier rectifier. Max repetitive peak reverse voltage 40 V. Max average forward rectified current 3.0 A. | SSE | - | 2 | -65°C | 125°C | 13K |
| 52. | 1N5822 | 40 V, 3 A, schottky barrier rectifier | TRSYS | DO | 2 | -50°C | 125°C | 159K |
| 53. | 1N5822-TB | 40V, 3.0A schottky barrier rectifier | WTE | - | 2 | -65°C | 150°C | 36K |
| 54. | 1N5822-TB | 40V, 3.0A schottky barrier rectifier | WTE | - | 2 | -65°C | 150°C | 36K |
| 55. | 1N5822S | 40 V, 3.0 A schottky barrier rectifier diode | EIC | D2A | 2 | -65°C | 125°C | 28K |
| 56. | FM5822 | 40 V, chip schottky barrier diode | FORMO | SMC | 2 | -55°C | 125°C | 67K |
| 57. | FM5822-A | 40 V, chip schottky barrier diode | FORMO | SMA | 2 | -55°C | 125°C | 67K |
| 58. | H1N5822 | 40V 3.0Amp schottky barrier rectifier | HSMC | - | 2 | -65°C | 125°C | 53K |
| 59. | NTE5822 | Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 600V. Non-repetitive peak reverse voltage 660V. | NTE | DO4 | 2 | -65°C | 150°C | 18K |
| 60. | SM5822B | Surface mount schottky barrier rectifier. Maximum recurrent peak reverse voltage 40 V. Maximum average forward rectified current 3.0 A. | BYTES | DO-214AA | - | -65°C | 125°C | 151K |
