We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet.com is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
All Data provided on this web site and the associated web pages is provided as is. It is intended to be for general information only, and is thus provided without any express or implied warranty or guarantee. It is the responsibility of the user or reader to ensure and confirm that this information is accurate and correct with the original publisher of the data sheet.
Most of the data sheets below are in the "pdf" format so it would be adviseable to use Adobe Acrobat Reader.
| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 41. | 1N5820 | Schottky barrier rectifier. Maximum recurrent peak reverse voltage 20 V. Maximum average forward rectified current 3.0 A. | BYTES | DO-27 | 2 | -65°C | 125°C | 151K |
| 42. | 1N5820 | Schottky barrier rectifier. Maximum repetitive peak reverse voltage VRRM = 20 V. Maximum forward average rectified current IAV = 3.0 A. | CNEL | - | 2 | -65°C | 125°C | 169K |
| 43. | 1N5820 | 20V; 3.0A schottky barrier rectifier. For use in low voltage, high frequency inverters, free wheeling and polarity protection application | DIODS | - | 2 | -65°C | 125°C | 51K |
| 44. | 1N5820 | 20 V, 3 A schottky barrier rectifier | FAGOR | - | 2 | -65°C | 125°C | 38K |
| 45. | 1N5820 | 20 V, 3 A schottky barrier rectifier | FORMO | DO-27 | 2 | -65°C | 125°C | 32K |
| 46. | 1N5820 | 20 V, 3 A schottky barrier rectifier | INVAC | DO | 2 | -60°C | 125°C | 79K |
| 47. | 1N5820 | 3.0 A, schottky barrier rectifier. Max reccurent peak reverse voltage 20 V, max RMS voltage 14 V, max DC blocking voltage 20 V. | JGD | - | 2 | -65°C | 125°C | 142K |
| 48. | 1N5820 | 20V, 3.0A schottky barrier rectifier | LITON | - | 2 | -55°C | 125°C | 33K |
| 49. | 1N5820 | 20 V, 3 A, schottky barrier diode | LRC | DO | 2 | - | - | 54K |
| 50. | 1N5820 | 3.0A, 20V ultra fast recovery rectifier | MCC | - | - | - | - | 46K |
| 51. | 1N5820 | Schottky barrier rectifier. Max repetitive peak reverse voltage 20 V. Max average forward rectified current 3.0 A. | SSE | - | 2 | -65°C | 125°C | 13K |
| 52. | 1N5820 | 20 V, 3.0 A schottky barrier rectifier | SURGE | DO | 2 | -50°C | 125°C | 76K |
| 53. | 1N5820 | 20 V, 3 A, schottky barrier rectifier | TEL | - | 2 | -50°C | 125°C | 159K |
| 54. | 1N5820 | 20 V, 3 A, schottky barrier rectifier | TRSYS | DO | 2 | -50°C | 125°C | 159K |
| 55. | 5962-9658201QXX | RadHard MSI: SMD. 9-bit parity generators/checkers. Class Q, QML. Lead finish optional. Total dose none. | UTMC | Ceramic flatpack | 14 | -55°C | 125°C | 10M |
| 56. | 5962-9658201QXX | RadHard MSI: SMD. 9-bit parity generators/checkers. Class Q, QML. Lead finish optional. Total dose none. | UTMC | Ceramic flatpack | 14 | -55°C | 125°C | 10M |
| 57. | FM5820 | 20 V, chip schottky barrier diode | FORMO | SMC | 2 | -55°C | 125°C | 67K |
| 58. | FM5820-A | 20 V, chip schottky barrier diode | FORMO | SMA | 2 | -55°C | 125°C | 67K |
| 59. | H1N5820 | 20V 3.0Amp schottky barrier rectifier | HSMC | - | 2 | -65°C | 125°C | 53K |
| 60. | NTE5820 | Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 400V. Non-repetitive peak reverse voltage 450V. | NTE | DO4 | 2 | -65°C | 150°C | 18K |
| 61. | SM5820B | Surface mount schottky barrier rectifier. Maximum recurrent peak reverse voltage 20 V. Maximum average forward rectified current 3.0 A. | BYTES | DO-214AA | - | -65°C | 125°C | 151K |
