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# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
521. | 1N5817 | 20 V, 1 A, schottky barrier diode | HONEY | DO | 2 | -65°C | 125°C | 155K |
522. | 1N5817 | 20 V, 1.0 A schottky barrier rectifier | SURGE | DO | 2 | -50°C | 125°C | 66K |
523. | 1N5818 | 30 V, 1 A, schottky barrier diode | HONEY | DO | 2 | -65°C | 125°C | 155K |
524. | 1N5818 | 30 V, 1.0 A schottky barrier rectifier | SURGE | DO | 2 | -50°C | 125°C | 66K |
525. | 1N5819 | 40 V, 1 A, schottky barrier diode | HONEY | DO | 2 | -65°C | 125°C | 155K |
526. | 1N5819 | 40 V, 1.0 A schottky barrier rectifier | SURGE | DO | 2 | -50°C | 125°C | 66K |
527. | BUK581-60A | 60 V, power MOS transistor logic level FET | PHLPS | SOT | 4 | - | - | 58K |
528. | ISP1581BD | Universal serial bus 2.0 high-speed interface device | PHLPS | LQFP | 64 | -40°C | 85°C | 1M |
529. | NTE5810 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1200V. Average forward current 12A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
530. | NTE5811 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1200V. Average forward current 12A. | NTE | DO4 | 2 | -65°C | 175°C | 24K |
531. | NTE5812 | 6 Amp. Plastic silicon rectifier. Max recurrent peak reverse voltage 100V. Max RMS voltage 70V. Max average forward rectified current 6A. | NTE | - | 2 | -65°C | 175°C | 15K |
532. | NTE5815 | 6 Amp. Plastic silicon rectifier. Max recurrent peak reverse voltage 600V. Max RMS voltage 420V. Max average forward rectified current 6A. | NTE | - | 2 | -65°C | 175°C | 15K |
533. | NTE5817 | 6 Amp. Plastic silicon rectifier. Max recurrent peak reverse voltage 1000V. Max RMS voltage 700V. Max average forward rectified current 6A. | NTE | - | 2 | -65°C | 175°C | 15K |
534. | NTE5818 | Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 200V. Non-repetitive peak reverse voltage 250V. | NTE | DO4 | 2 | -65°C | 150°C | 18K |
535. | NTE5819 | Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 200V. Non-repetitive peak reverse voltage 250V. | NTE | DO4 | 2 | -65°C | 150°C | 18K |
536. | PCA8581CP | 128 x 8 bit EEPROM with I2C-bus interface | PHLPS | DIP | 8 | -25°C | 85°C | 107K |
537. | PCA8581P | 128 x 8 bit EEPROM with I2C-bus interface | PHLPS | DIP | 8 | -25°C | 85°C | 107K |
538. | PCA8581T | 128 x 8 bit EEPROM with I2C-bus interface | PHLPS | SO | 8 | -25°C | 85°C | 107K |
539. | PJ1581CZ | 7V; 5A; dual input low dropout voltage regulator | PROMX | TO-220-5L | 3 | -20°C | 85°C | 252K |
540. | SAA6581T | 5.5 V, RDS/RBDS demodulator | PHLPS | SO | 16 | -40°C | 85°C | 75K |