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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 301. | 1N5817 | Schottky barrier rectifier. VRRM = 20V. VRMS = 14V. VDC = 20V. Current 1.0A | RECTR | - | 2 | -65°C | 125°C | 23K |
| 302. | 1N5818 | Schottky barrier rectifier. VRRM = 30V. VRMS = 21V. VDC = 30V. Current 1.0A | RECTR | - | 2 | -65°C | 125°C | 23K |
| 303. | 1N5819 | Schottky barrier rectifier. VRRM = 40V. VRMS = 28V. VDC = 40V. Current 1.0A | RECTR | - | 2 | -65°C | 125°C | 23K |
| 304. | 2N5810 | Complementary silicon AF medium power transistor | ME | TO-92A | 3 | -55°C | 150°C | 162K |
| 305. | 2N5811 | Complementary silicon AF medium power transistor | ME | TO-92A | 3 | -55°C | 150°C | 162K |
| 306. | 2N5812 | Complementary silicon AF medium power transistor | ME | TO-92A | 3 | -55°C | 150°C | 162K |
| 307. | 2N5813 | Complementary silicon AF medium power transistor | ME | TO-92A | 3 | -55°C | 150°C | 162K |
| 308. | 2N5814 | Complementary silicon AF medium power transistor | ME | TO-92A | 3 | -55°C | 150°C | 162K |
| 309. | 2N5815 | Complementary silicon AF medium power transistor | ME | TO-92A | 3 | -55°C | 150°C | 162K |
| 310. | CD5818 | 30 V, 1 Amp schottky barrier rectifier chip | CDIDI | - | - | -55°C | 125°C | 118K |
| 311. | CD5819 | 40 V, 1 Amp schottky barrier rectifier chip | CDIDI | - | - | -55°C | 125°C | 118K |
| 312. | FM5817 | Surface mount schottky barrier rectifier. MaxVRRM = 20V, maxVRMS = 14V, maxVDC = 20V. Current 1.0A. | RECTR | DO-214AC | 2 | -65°C | 125°C | 22K |
| 313. | FM5818 | Surface mount schottky barrier rectifier. MaxVRRM = 30V, maxVRMS = 21V, maxVDC = 30V. Current 1.0A. | RECTR | DO-214AC | 2 | -65°C | 125°C | 22K |
| 314. | FM5819 | Surface mount schottky barrier rectifier. MaxVRRM = 40V, maxVRMS = 28V, maxVDC = 40V. Current 1.0A. | RECTR | DO-214AC | 2 | -65°C | 125°C | 22K |
| 315. | IRF5810 | HEXFET power MOSFET. VDSS = -20V, RDS(on) = 90 mOhm, ID = -2.9A @ VGS = -4.5V, RDS(on) = 135 mOhm, ID = -2.3A @ VGS = -2.5V | IRF | TSOP | 6 | -55°C | 150°C | 208K |
| 316. | JHC5819 | 45 V, 1 Amp schottky barrier rectifier chip | CDIDI | - | - | -55°C | 125°C | 118K |
| 317. | JKC5819 | 45 V, 1 Amp schottky barrier rectifier chip | CDIDI | - | - | -55°C | 125°C | 118K |
| 318. | SM5817 | Surface mount schottky barrier rectifier. Max recurrent peak reverse voltage 20V, max RMS voltage 14V, max DC blocking voltage 20V. Max average forward recftified current 1.0A at Ta=90degC | RECTR | MELF | - | -65°C | 125°C | 191K |
| 319. | SM5818 | Surface mount schottky barrier rectifier. Max recurrent peak reverse voltage 30V, max RMS voltage 21V, max DC blocking voltage 30V. Max average forward recftified current 1.0A at Ta=90degC | RECTR | MELF | - | -65°C | 125°C | 191K |
| 320. | SM5819 | Surface mount schottky barrier rectifier. Max recurrent peak reverse voltage 40V, max RMS voltage 28V, max DC blocking voltage 40V. Max average forward recftified current 1.0A at Ta=90degC | RECTR | MELF | - | -65°C | 125°C | 191K |
