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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 21. | 28C256APC-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. | TURBO | PDIP | 28 | 0°C | 70°C | 41K |
| 22. | 28C256APC-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. | TURBO | PDIP | 28 | 0°C | 70°C | 41K |
| 23. | 28C256APC-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | TURBO | PDIP | 28 | 0°C | 70°C | 41K |
| 24. | 28C256APC-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | TURBO | PDIP | 28 | 0°C | 70°C | 41K |
| 25. | 28C256API-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. | TURBO | PDIP | 28 | -40°C | 85°C | 41K |
| 26. | 28C256API-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. | TURBO | PDIP | 28 | -40°C | 85°C | 41K |
| 27. | 28C256API-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | TURBO | PDIP | 28 | -40°C | 85°C | 41K |
| 28. | 28C256API-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | TURBO | PDIP | 28 | -40°C | 85°C | 41K |
| 29. | 28C256APM-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. | TURBO | PDIP | 28 | -55°C | 125°C | 41K |
| 30. | 28C256APM-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. | TURBO | PDIP | 28 | -55°C | 125°C | 41K |
| 31. | 28C256APM-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | TURBO | PDIP | 28 | -55°C | 125°C | 41K |
| 32. | 28C256APM-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | TURBO | PDIP | 28 | -55°C | 125°C | 41K |
| 33. | HM62256AP-12 | 32,768-word x 8-bit high speed CMOS static RAM, 120ns | HIT | DIP | 28 | 0°C | 70°C | 71K |
| 34. | HM62256AP-15 | 32,768-word x 8-bit high speed CMOS static RAM, 150ns | HIT | DIP | 28 | 0°C | 70°C | 71K |
| 35. | HM62256AP-8 | 32,768-word x 8-bit high speed CMOS static RAM, 85ns | HIT | DIP | 28 | 0°C | 70°C | 71K |
| 36. | HY62256AP-55 | 32Kx8bit CMOS SRAM, standby current=1mA, 55ns | HEI | PDIP | 28 | 0°C | 70°C | 820K |
| 37. | HY62256AP-85 | 32Kx8bit CMOS SRAM, standby current=1mA, 85ns | HEI | PDIP | 28 | 0°C | 70°C | 820K |
| 38. | HY62256AP-I-55 | 32Kx8bit CMOS SRAM, standby current=1mA, 55ns | HEI | PDIP | 28 | -40°C | 85°C | 820K |
| 39. | HY62256AP-I-70 | 32Kx8bit CMOS SRAM, standby current=1mA, 70ns | HEI | PDIP | 28 | -40°C | 85°C | 820K |
| 40. | HY62256AP-I-85 | 32Kx8bit CMOS SRAM, standby current=1mA, 85ns | HEI | PDIP | 28 | -40°C | 85°C | 820K |
