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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 81. | EDI88512CA55N36B | 55ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 | WHITE | SOJ | 36 | - | - | 268K |
| 82. | EDI88512CA55N36I | 55ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 | WHITE | SOJ | 36 | -40°C | 85°C | 268K |
| 83. | EDI88512CA55N36M | 55ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 | WHITE | SOJ | 36 | -55°C | 125°C | 268K |
| 84. | EDI88512LPA55N36B | 55ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 | WHITE | SOJ | 36 | - | - | 268K |
| 85. | EDI88512LPA55N36C | 55ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 | WHITE | SOJ | 36 | 0°C | 70°C | 268K |
| 86. | EDI88512LPA55N36I | 55ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 | WHITE | SOJ | 36 | -40°C | 85°C | 268K |
| 87. | EDI88512LPA55N36M | 55ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 | WHITE | SOJ | 36 | -55°C | 125°C | 268K |
| 88. | M27C4001-55N1TR | 4 Mbit (512Kb x 8) EPROM, 55ns | STM | TSOP | 32 | 0°C | 70°C | 113K |
| 89. | M27C4001-55N1X | 4 Mbit (512Kb x 8) EPROM, 55ns | STM | TSOP | 32 | 0°C | 70°C | 113K |
| 90. | M27C4001-55N6TR | 4 Mbit (512Kb x 8) EPROM, 55ns | STM | TSOP | 32 | -40°C | 85°C | 113K |
| 91. | M27C4001-55N6X | 4 Mbit (512Kb x 8) EPROM, 55ns | STM | TSOP | 32 | -40°C | 85°C | 113K |
| 92. | M29F102BB55N1T | 1 Mbit (64Kb x16, boot block) single supply flash memory, 55ns | STM | TSOP | 40 | 0°C | 70°C | 173K |
| 93. | PHD55N03LT | TrenchMOS transistor. Logic level FET. | PHLPS | SOT428 | 3 | -55°C | 175°C | 77K |
| 94. | PHP55N03LT | TrenchMOS transistor. Logic level FET. | PHLPS | SOT78 | 3 | -55°C | 175°C | 77K |
| 95. | PHP55N03LT | TrenchMOS transistor. Logic level FET. | PHLPS | TO220AB | 3 | -55°C | 175°C | 77K |
| 96. | PHP55N03LT | TrenchMOS transistor. Logic level FET. | PHLPS | TO220AB | 3 | -55°C | 175°C | 77K |
| 97. | SDB55N02 | 20V; 55A; 75W; N-channel enchanced mode field effect transistor | SM | TO-220 | 3 | -65°C | 175°C | 412K |
| 98. | SDB55N02 | 20V; 55A; 75W; N-channel enchanced mode field effect transistor | SM | TO-263 | 3 | -65°C | 175°C | 412K |
| 99. | SDP55N02 | 20V; 55A; 75W; N-channel enchanced mode field effect transistor | SM | TO-220 | 3 | -65°C | 175°C | 412K |
| 100. | SDP55N02 | 20V; 55A; 75W; N-channel enchanced mode field effect transistor | SM | TO-263 | 3 | -65°C | 175°C | 412K |
