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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 121. | A-5570E | Common anode hi.effi red 2.0 inch, 5x7 dot matrix display | PARA | - | 14 | - | - | 95K |
| 122. | A-5570G | Common anode green 2.0 inch, 5x7 dot matrix display | PARA | - | 14 | - | - | 95K |
| 123. | A-5570H | Common anode red 2.0 inch, 5x7 dot matrix display | PARA | - | 14 | - | - | 95K |
| 124. | A-5570SR | Common anode super red 2.0 inch, 5x7 dot matrix display | PARA | - | 14 | - | - | 95K |
| 125. | A-5570Y | Common anode yellow 2.0 inch, 5x7 dot matrix display | PARA | - | 14 | - | - | 95K |
| 126. | BC557A | Ic=100mA, Vce=5.0V transistor | MCC | - | - | - | - | 690K |
| 127. | BC557C | Ic=100mA, Vce=5.0V transistor | MCC | - | - | - | - | 690K |
| 128. | C-5570E | Common cathode hi.effi red 2.0 inch, 5x7 dot matrix display | PARA | - | 14 | - | - | 95K |
| 129. | C-5570G | Common cathode green 2.0 inch, 5x7 dot matrix display | PARA | - | 14 | - | - | 95K |
| 130. | C-5570H | Common cathode red 2.0 inch, 5x7 dot matrix display | PARA | - | 14 | - | - | 95K |
| 131. | C-5570SR | Common cathode super red 2.0 inch, 5x7 dot matrix display | PARA | - | 14 | - | - | 95K |
| 132. | C-5570Y | Common cathode yellow 2.0 inch, 5x7 dot matrix display | PARA | - | 14 | - | - | 95K |
| 133. | NTE5570 | Silicon controlled rectiifier for phase control applications. Repetitive peak voltage, Vrrm = 200V. Non - repetitive peak reverse blocking voltage, Vrsm = 500V. RMS on-state current, Itrms = 125A. | NTE | - | 4 | -40°C | 125°C | 21K |
| 134. | NTE5571 | Silicon controlled rectiifier (SCR) for phase control applications. Max repetitive peak forward and reverse voltage 1600V. Max non - repetitive peak voltage 1700V. Max peak reverse and off-state current 15mA. | NTE | - | 3 | -40°C | 125°C | 26K |
| 135. | NTE5572 | Silicon controlled rectiifier for phase control applications. Repetitive peak voltage, Vrrm = 600V. Non - repetitive peak reverse blocking voltage, Vrsm = 900V. RMS on-state current, Itrms = 125A. | NTE | - | 4 | -40°C | 125°C | 21K |
| 136. | NTE5575 | Silicon controlled rectiifier. Repetitive peak forward blocking voltage, Vdrm = 200V. Repetitive peak reverse voltage, Vrrm = 200V. RMS on-state current Itrms = 125A. | NTE | - | 3 | -40°C | 125°C | 19K |
| 137. | NTE5576 | Silicon controlled rectiifier. Repetitive peak voltage, Vdrm,Vrrm = 600V. RMS on-state current Itrms = 175A. | NTE | - | 4 | -40°C | 125°C | 21K |
| 138. | NTE5577 | Silicon controlled rectiifier. Repetitive peak forward blocking voltage, Vdrm = 600V. Repetitive peak reverse voltage, Vrrm = 600V. RMS on-state current Itrms = 125A. | NTE | - | 3 | -40°C | 125°C | 19K |
| 139. | NTE5578 | Silicon controlled rectiifier. Repetitive peak voltage, Vdrm,Vrrm = 1600V. RMS on-state current Itrms = 175A. | NTE | - | 4 | -40°C | 125°C | 21K |
| 140. | NTE5579 | Silicon controlled rectiifier. Repetitive peak forward blocking voltage, Vdrm = 1200V. Repetitive peak reverse voltage, Vrrm = 1200V. RMS on-state current Itrms = 125A. | NTE | - | 3 | -40°C | 125°C | 19K |
