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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 41. | 1N5551 | 400 V rectifier 5.0 A forward current, 2000 ns recovery time | VMI | - | 2 | -65°C | 175°C | 101K |
| 42. | 2N5551 | 1W NPN complementary silicon general purpose high voltage transistor | ME | TO-92F | 3 | -55°C | 150°C | 165K |
| 43. | 2N5551 | Amplifier transistor. Collector-emitter voltage: Vceo = 160V. Collector-base voltage: Vcbo = 180V. Collector dissipation: Pc(max) = 625mW. | USHA | - | 3 | 0°C | 150°C | 75K |
| 44. | 2SC5551 | NPN Epitaxial Planar Silicon Transistor High-Frequency Medium-Output Amplifier Applications | SANYO | - | - | - | - | 43K |
| 45. | AD5551BR | 0.3-6V; serial-input voltage-output, 14-bit DAC. For digital gain and offset adjustment, automatic test equipment, data acquisition systems and industrial process control | AD | SOIC | 8 | -40°C | 85°C | 220K |
| 46. | H2N5551 | 600mA NPN epitaxial planar transistor | HSMC | - | 3 | - | - | 37K |
| 47. | HM5551 | Emitter to base voltage:6V; NPN epitaxial planar transistor for general purpose applications requiring high breakdown voltages | HSMC | SOT-89 | 3 | - | - | 31K |
| 48. | HMBT5551 | Emitter to base voltage:6V; 600mA NPN epitaxial planar transistor for general purpose applications requiring high breakdown voltage | HSMC | SOT-23 | 3 | - | - | 31K |
| 49. | HN/2N5551 | 160 V, NPN silicon expitaxial planar transistor | HONEY | - | 3 | - | - | 131K |
| 50. | MMBT5551 | 180V; 200mA NPN small signal surface mount transistor. Ideal for medium power application and switching | DIODS | SOT-23 | 3 | -55°C | 150°C | 47K |
| 51. | MMBT5551 | 180 V, NPN small signal surface mount transistor | TRSYS | SOT-23 | 3 | -55°C | 150°C | 170K |
| 52. | MMBT5551 | 140 V, high voltage transistor NPN silicon | ZOWIE | SOT | 3 | -55°C | 150°C | 84K |
| 53. | MMBT5551 | 140 V, high voltage transistor NPN silicon | ZOWIE | SOT | 3 | -55°C | 150°C | 84K |
| 54. | MMBT5551LT1 | 140 V, high voltage transistor | LRC | SOT-23 | 3 | -55°C | 150°C | 165K |
| 55. | MMDT5551 | 180V; 200mA dual NPN small signal surface mount transistor. Ideal for medium power amplification and switching | DIODS | SOT-363 | 6 | -55°C | 150°C | 41K |
| 56. | MMST5551 | 180V; 200mA NPN small signal surface mount transistor. Ideal for medium power amplification and switching | DIODS | SOT-363 | 6 | -55°C | 150°C | 41K |
| 57. | PJ2N5551CT | 180V; 600mA NPN epitaxial silicon transistor | PROMX | - | 3 | -20°C | 85°C | 190K |
| 58. | SAA5551PS | 3.6 V, standart TV microcontroller with on-screen display | PHLPS | DIP | 52 | -20°C | 75°C | 340K |
| 59. | SZ5551 | 51 V, 3 W, surface mount silicon zener diode | EIC | SMA | 2 | -55°C | 150°C | 28K |
| 60. | TEA5551T | 1.8-4.5 V, 1-chip AM radio | PHLPS | SO | 16 | -25°C | 60°C | 157K |
