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# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
21. | 1N5551 | Glass Passivated Junction Rectifier | GE | G4 | - | - | - | 53K |
22. | 1N5551 | Standard Rectifier (trr more than 500ns) | MSEMI | B_(WT) | - | - | - | 78K |
23. | 1N5551 | Standard Rectifier (trr more than 500ns) | MSEMI | E | - | - | - | 46K |
24. | 1N5551US | Standard Rectifier (trr more than 500ns) | MSEMI | B_MELF(WT) | - | - | - | 78K |
25. | 2N5551 | 150 V, NPN epitaxial planar selicon high voltage transistor | BOCA | - | 3 | -55°C | 150°C | 57K |
26. | 2N5551 | NPN General Purpose Amplifier | FAIR | - | 3 | - | - | 500K |
27. | 2N5551 | NPN transistor for general purpose and high voltage applications | KEC | - | 3 | -55°C | 150°C | 146K |
28. | 2N5551C | NPN transistor for general purpose and high voltage applications | KEC | - | 3 | -55°C | 150°C | 164K |
29. | 2N5551S | NPN transistor for general purpose and high voltage applications | KEC | SOT-23 | 3 | -55°C | 150°C | 150K |
30. | CMPT5551 | NPN silicon transistor | CENTR | SOT | 3 | -65°C | 150°C | 78K |
31. | CXT5551 | Surface mount NPN silicon transistor | CENTR | SOT | 3 | -65°C | 150°C | 100K |
32. | CZT5551 | NPN silicon transistor | CENTR | SOT | 4 | -65°C | 150°C | 93K |
33. | MMBT5551 | NPN General Purpose Amplifier | FAIR | SOT-23 | 3 | - | - | 500K |
34. | MMBT5551LT1 | High voltage transistor | MOT | SOT-23 | 3 | -55°C | 150°C | 199K |
35. | NDL5551P2 | Optical communication photodiode module | NEC | Coaxial module with | - | - | - | 76K |
36. | NDL5551P2 | Optical communication photodiode module | NEC | Coaxial module with | - | - | - | 76K |
37. | NDL5551P2C | Optical communication photodiode module | NEC | Coaxial type with FC | - | - | - | 76K |
38. | NDL5551PC | Optical communication photodiode module | NEC | Coaxial module with | - | - | - | 76K |
39. | WMBT5551LT1 | NPN silicon transistor. Collector-emitter voltage 160V. Collector-base voltage 180V. Emitter-base voltage 6.0V | WINGS | SOT-23 | 3 | - | - | 36K |