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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 21. | 1N5550 | Glass Passivated Junction Rectifier | GE | G4 | - | - | - | 53K |
| 22. | 1N5550 | Standard Rectifier (trr more than 500ns) | MSEMI | B_(WT) | - | - | - | 78K |
| 23. | 1N5550 | Standard Rectifier (trr more than 500ns) | MSEMI | E | - | - | - | 46K |
| 24. | 1N5550 | 200 V rectifier 5.0 A forward current, 2000 ns recovery time | VMI | - | 2 | -65°C | 175°C | 101K |
| 25. | 1N5550US | Standard Rectifier (trr more than 500ns) | MSEMI | B_MELF(WT) | - | - | - | 78K |
| 26. | 1N5550US | Standard Rectifier (trr more than 500ns) | MSEMI | MELF_E | - | - | - | 46K |
| 27. | 2N5550 | 1W NPN complementary silicon general purpose high voltage transistor | ME | TO-92F | 3 | -55°C | 150°C | 165K |
| 28. | 2N5550 | Amplifier transistor. Collector-emitter voltage: Vceo = 140V. Collector-base voltage: Vcbo = 160V. Collector dissipation: Pc(max) = 625mW. | USHA | - | 3 | 0°C | 150°C | 34K |
| 29. | 2N5550S | NPN transistor for general purpose and high voltage applications | KEC | SOT-23 | 3 | -55°C | 150°C | 152K |
| 30. | 2SC5550 | Silicon NPN triple diffused type transistor for high speed switching applications for inverter lighting system | TOS | - | 3 | - | - | 176K |
| 31. | 5962H9655501VEX | RadHard MSI: SMD. 4-bit synchronous counter. Class V, QML. Lead finish optional. Total dose 1E6 rads(Si). | UTMC | Ceramic DIP | 16 | -55°C | 125°C | 10M |
| 32. | HN/2N5550 | 140 V, NPN silicon expitaxial planar transistor | HONEY | - | 3 | - | - | 131K |
| 33. | KST5550 | NPN Epitaxial Silicon Transistor | FAIR | - | - | - | - | 56K |
| 34. | MMBT5550 | 140 V, high voltage transistor NPN silicon | ZOWIE | SOT | 3 | -55°C | 150°C | 84K |
| 35. | MMBT5550 | 140 V, high voltage transistor NPN silicon | ZOWIE | SOT | 3 | -55°C | 150°C | 84K |
| 36. | MMBT5550LT1 | 140 V, high voltage transistor | LRC | SOT-23 | 3 | -55°C | 150°C | 165K |
| 37. | MMBT5550LT1 | High voltage transistor | MOT | SOT-23 | 3 | -55°C | 150°C | 199K |
| 38. | NTE5550 | Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 50V. Forward current 25A. | NTE | TO220 | 3 | -40°C | 125°C | 20K |
| 39. | PMST5550 | NPN high-voltage transistor. | PHLPS | SOT323 | 3 | -65°C | 150°C | 68K |
| 40. | TSLM5550 | Chemical-optical sensor platform. Wavelength 555 nm. | TAOS | - | 16 | 0°C | 70°C | 82K |
