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We have more Special DataSheet than other site. If, There is not a datasheet which searches, Request ! (It will updated in 12 hours.)
GetDatasheet is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide.
Found: 633 Displaying: 521 - 540| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size | | 521. | 1415513 | Bobbin type inductor. Inductance (+-10% at 1kHz) 1.5mH. | CANDD | - | 2 | -40°C | 85°C | 91K | | 522. | 1415514 | Bobbin type inductor. Inductance (+-10% at 1kHz) 1.5mH. | CANDD | - | 2 | -40°C | 85°C | 91K | | 523. | 1415517 | Bobbin type inductor. Inductance (+-10% at 1kHz) 1.5mH. | CANDD | - | 2 | -40°C | 85°C | 91K | | 524. | 1N5518 | Nom zener voltage:3.3V; measured from 1000-3000Hz; low voltage avalanche zener diode; high performance: low noise, low leakage | KNOX | DO-7 | - | - | - | 39K | | 525. | 1N5518A | 0.4W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-10% tolerance. | JGD | DO-35 | 2 | -65°C | 200°C | 243K | | 526. | 1N5518B | 0.4 W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-5% tolerance. | JGD | DO-35 | 2 | -65°C | 200°C | 243K | | 527. | 1N5518C | 0.4 W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-2% tolerance. | JGD | DO-35 | 2 | -65°C | 200°C | 243K | | 528. | 1N5519 | Nom zener voltage:3.6V; measured from 1000-3000Hz; low voltage avalanche zener diode; high performance: low noise, low leakage | KNOX | DO-7 | - | - | - | 39K | | 529. | ASM25512C | 3 V, very low-cost voice synthesizer with 4-bit microprocessor | APLUS | - | 21 | - | - | 617K | | 530. | L7551-21 | 2V; 0.2mW; laser diode: repectacle type, 1.3um, 1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit ethernet, HDTV, SDH | HAMAM | - | 4 | -20°C | 70°C | 112K | | 531. | L7551-22 | 2V; 0.2mW; laser diode: repectacle type, 1.3um, 1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit ethernet, HDTV, SDH | HAMAM | - | 4 | -20°C | 70°C | 112K | | 532. | L7551-23 | 2V; 0.2mW; laser diode: repectacle type, 1.3um, 1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit ethernet, HDTV, SDH | HAMAM | - | 4 | -20°C | 70°C | 112K | | 533. | L7551-32 | 2V; 0.2mW; laser diode: repectacle type, 1.3um, 1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit ethernet, HDTV, SDH | HAMAM | - | 4 | -20°C | 70°C | 112K | | 534. | L7551-44 | 2V; 0.2mW; laser diode: repectacle type, 1.3um, 1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit ethernet, HDTV, SDH | HAMAM | - | 4 | -20°C | 70°C | 112K | | 535. | TSA5512AM | 1.3 GHz bidirectional I2C-bus controlled synthesizer. | PHLPS | SOT266-1 | 20 | -10°C | 80°C | 161K | | 536. | TSA5512AM | 1.3 GHz bidirectional I2C-bus controlled synthesizer. | PHLPS | SOT266 | 20 | -10°C | 80°C | 161K | | 537. | TSA5512AT | 1.3 GHz bidirectional I2C-bus controlled synthesizer. | PHLPS | SOT163A | 20 | -10°C | 80°C | 161K | | 538. | TSA5512AT | 1.3 GHz bidirectional I2C-bus controlled synthesizer. | PHLPS | SOT163A | 20 | -10°C | 80°C | 161K | | 539. | TSA5512AT | 1.3 GHz bidirectional I2C-bus controlled synthesizer. | PHLPS | SOT163-1 | 20 | -10°C | 80°C | 161K | | 540. | TSA5515T | 1.3 GHz bi-directional I2C-bus controlled synthesizer. | PHLPS | SOT108-1 | 14 | -10°C | 80°C | 113K |
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