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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 61. | 1N5407 | 800 V, 3 A, plastic silicon rectifier | HONEY | DO | 2 | -65°C | 175°C | 126K |
| 62. | 1N5407 | 800 V, 3.0 A silicon rectifier | SURGE | DO | 2 | -65°C | 125°C | 121K |
| 63. | 1N5407 | 800 V, 3 A, high current plastic silicon rectifier | TEL | - | 2 | -55°C | 150°C | 155K |
| 64. | 1N5407G | 3.0 A, glass passivated rectifier. Max recurrent peak reverse voltage 800 V, max RMS voltage 560 V, max D. C blocking voltage 800 V. | JGD | - | 2 | -65°C | 150°C | 128K |
| 65. | 1N5407GP | 800 V, 3 A glass passivated junction rectifier | FAGOR | - | 2 | -65°C | 175°C | 39K |
| 66. | 5962H9475407QLA | Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 15.5ns propagation delay, CMOS I/O. Class Q. Lead finish solder. | UTMC | DIP | 24 | -55°C | 125°C | 287K |
| 67. | 5962H9475407QLA | Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 15.5ns propagation delay, CMOS I/O. Class Q. Lead finish solder. | UTMC | DIP | 24 | -55°C | 125°C | 287K |
| 68. | 5962H9475407QLX | Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 15.5ns propagation delay, CMOS I/O. Class Q. Lead finish optional. | UTMC | DIP | 24 | -55°C | 125°C | 287K |
| 69. | 5962H9475407QXA | Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 15.5ns propagation delay, CMOS I/O. Class Q. Lead finish solder. | UTMC | FlatPack | 24 | -55°C | 125°C | 287K |
| 70. | 5962H9475407QXC | Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 15.5ns propagation delay, CMOS I/O. Class Q. Lead finish gold. | UTMC | FlatPack | 24 | -55°C | 125°C | 287K |
| 71. | 5962H9475407QXX | Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 15.5ns propagation delay, CMOS I/O. Class Q. Lead finish optional. | UTMC | FlatPack | 24 | -55°C | 125°C | 287K |
| 72. | 5962H9475407QYC | Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 15.5ns propagation delay, CMOS I/O. Class Q. Lead finish gold. | UTMC | Quad flatpack | 28 | -55°C | 125°C | 287K |
| 73. | 5962H9475407QYX | Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 15.5ns propagation delay, CMOS I/O. Class Q. Lead finish optional. | UTMC | Quad flatpack | 28 | -55°C | 125°C | 287K |
| 74. | 5962H9475407VYC | Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 15.5ns propagation delay, CMOS I/O. Class V. Lead finish gold. | UTMC | Quad flatpack | 28 | -55°C | 125°C | 287K |
| 75. | FUF5407 | 3 amp, glass passivated ultrafast recovery rectifier, 800V | FAGOR | - | 2 | -65°C | 150°C | 38K |
| 76. | FUF5407 | 800 V, 3 A glass passivated ultrafast recovery rectifier | FAGOR | - | 2 | -65°C | 150°C | 38K |
| 77. | IN5407 | 3.0 A, silicon rectifier. Max recurrent peak reverse voltage 800 V, max RMS voltage 560 V, max D. C blocking voltage 800 V. | JGD | - | 2 | -65°C | 125°C | 139K |
| 78. | UF5407 | 800 V, 3 A ultra-fast silicon rectifier | INVAC | DO | 2 | -65°C | 150°C | 79K |
| 79. | UF5407 | Ultra fast rectifier. Max recurrent peak reverse voltage 800 V. Max average forward rectified current 3.0 A. | JGD | - | 2 | -65°C | 125°C | 159K |
| 80. | UF5407G | Glass passivated ultra fast rectifier. Max recurrent peak reverse voltage 800 V. Max average forward rectified current 3.0 A. | JGD | - | 2 | -65°C | 150°C | 165K |
