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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 101. | 1N5405 | General purpose plastic rectifier. Max recurrent peak reverse voltage 500 V. Max average forward rectified current 3.0 A. | CNEL | - | 2 | -50°C | 175°C | 159K |
| 102. | 1N5405 | 500 V, 3 A, plastic silicon rectifier | HONEY | DO | 2 | -65°C | 175°C | 126K |
| 103. | 1N5405 | 500 V, 3 A, high current plastic silicon rectifier | TEL | - | 2 | -55°C | 150°C | 155K |
| 104. | 1N5405 | 500 V, 3 A, high current plastic silicon rectifier | TRSYS | DO | 2 | -55°C | 150°C | 155K |
| 105. | 1N5405G | 500V; 3.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop | DIODS | - | 2 | -65°C | 150°C | 59K |
| 106. | 1N5405G | 800 V, 3 A, general purpose GPP diode | LRC | DO | 2 | - | - | 50K |
| 107. | 5962H9475405QLA | Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish solder. | UTMC | DIP | 24 | -55°C | 125°C | 287K |
| 108. | 5962H9475405QLC | Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish gold. | UTMC | DIP | 24 | -55°C | 125°C | 287K |
| 109. | 5962H9475405QLX | Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish optional. | UTMC | DIP | 24 | -55°C | 125°C | 287K |
| 110. | 5962H9475405QXA | Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish solder. | UTMC | FlatPack | 24 | -55°C | 125°C | 287K |
| 111. | 5962H9475405QXA | Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish solder. | UTMC | FlatPack | 24 | -55°C | 125°C | 287K |
| 112. | 5962H9475405QXC | Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish gold. | UTMC | FlatPack | 24 | -55°C | 125°C | 287K |
| 113. | 5962H9475405QXC | Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish gold. | UTMC | FlatPack | 24 | -55°C | 125°C | 287K |
| 114. | 5962H9475405QXX | Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish optional. | UTMC | FlatPack | 24 | -55°C | 125°C | 287K |
| 115. | 5962H9475405QYC | Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish gold. | UTMC | Quad flatpack | 28 | -55°C | 125°C | 287K |
| 116. | 5962H9475405QYC | Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish gold. | UTMC | Quad flatpack | 28 | -55°C | 125°C | 287K |
| 117. | C5405-50 | Number of pixels: 768x494; ; 1/2-inch CCD video camera | HAMAM | - | - | 0°C | 40°C | 103K |
| 118. | C5405-51 | Number of pixels: 752x582; ; 1/2-inch CCD video camera | HAMAM | - | - | 0°C | 40°C | 103K |
| 119. | KSC5405 | NPN Silicon Transistor | FAIR | - | - | - | - | 39K |
| 120. | KSC5405F | NPN Silicon Transistor | FAIR | - | - | - | - | 45K |
| 121. | NTE5405 | Silicon controlled rectifier (SCR). 0.8 Amp sensitive gate. Repetitive peak reverse voltage Vrrm = 400V. | NTE | TO92 | 3 | -40°C | 100°C | 18K |
