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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 141. | 1N5402 | Silicon rectifier. Case molded plastic. Maximum recurrent peak reverse voltage 200 V. Maximum average forward rectified current 3.0 A. | BYTES | DO-27 | 2 | -65°C | 150°C | 151K |
| 142. | 1N5402 | General purpose plastic rectifier. Max recurrent peak reverse voltage 200 V. Max average forward rectified current 3.0 A. | CNEL | - | 2 | -50°C | 175°C | 159K |
| 143. | 1N5402 | 200V; 3.0A rectifier; high current capability and low forward voltage drop | DIODS | - | 2 | -65°C | 175°C | 62K |
| 144. | 1N5402 | 200 V, 3 A silicon rectifier | FORMO | DO-27 | 2 | -65°C | 175°C | 32K |
| 145. | 1N5402 | 200 V, 3 A, plastic silicon rectifier | HONEY | DO | 2 | -65°C | 175°C | 126K |
| 146. | 1N5402 | 200V, 3.0A plastic silicon rectifier | LITON | - | 2 | -55°C | 125°C | 33K |
| 147. | 1N5402 | 200 V, 3 A general diode | LRC | DO | 2 | - | - | 49K |
| 148. | 1N5402 | 3.0A, 200V ultra fast recovery rectifier | MCC | - | - | - | - | 78K |
| 149. | 1N5402 | 200 V, 3.0 A silicon rectifier | SURGE | DO | 2 | -65°C | 125°C | 121K |
| 150. | 1N5402 | 200 V, 3 A, high current plastic silicon rectifier | TRSYS | DO | 2 | -55°C | 150°C | 155K |
| 151. | 1N5402G | Glass passivated rectifier. Maximum recurrent peak reverse voltage 200 V. Maximum average forward rectified current 3.0 A. | BYTES | DO-27 | 2 | -65°C | 175°C | 151K |
| 152. | 1N5402G | 200V; 3.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop | DIODS | - | 2 | -65°C | 150°C | 59K |
| 153. | 1N5402G | 200 V, 1 A glass passivated rectifier | FORMO | DO-27 | 2 | -65°C | 175°C | 32K |
| 154. | 1N5402G | 200 V, 3 A, general purpose GPP diode | LRC | DO | 2 | - | - | 50K |
| 155. | 1N5402G | Glass passivated junction rerctifier. Max repetitive peak reverse voltage 200 V. Max average forward rectified current 3.0 A. | SSE | - | 2 | -65°C | 150°C | 16K |
| 156. | 1N5402GP | 3.0A, 200V ultra fast recovery rectifier | MCC | - | - | - | - | 78K |
| 157. | KSC5402D | NPN Silicon Transistor Planar Silicon Transistor | FAIR | - | - | - | - | 155K |
| 158. | NTE5402 | Silicon controlled rectifier (SCR). 0.8 Amp sensitive gate. Repetitive peak reverse voltage Vrrm = 100V. | NTE | TO92 | 3 | -40°C | 100°C | 18K |
| 159. | UF5402 | 3.0A, 200V ultra fast recovery rectifier | MCC | - | - | - | - | 82K |
| 160. | UF5402GP | 3.0A, 200V ultra fast recovery rectifier | MCC | - | - | - | - | 85K |
