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| # | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
| 141. | 1N5401 | 100V; 3.0A rectifier; high current capability and low forward voltage drop | DIODS | - | 2 | -65°C | 175°C | 62K |
| 142. | 1N5401 | 100 V, 3 A silicon rectifier | INVAC | DO | 2 | -50°C | 170°C | 81K |
| 143. | 1N5401 | 100 V, 3 A general diode | LRC | DO | 2 | - | - | 49K |
| 144. | 1N5401 | 3.0A, 100V ultra fast recovery rectifier | MCC | - | - | - | - | 78K |
| 145. | 1N5401 | 100 V, 3 A, high current plastic silicon rectifier | TRSYS | DO | 2 | -55°C | 150°C | 155K |
| 146. | 1N5401G | 100V; 3.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop | DIODS | - | 2 | -65°C | 150°C | 59K |
| 147. | 1N5401G | 100 V, 3 A, general purpose GPP diode | LRC | DO | 2 | - | - | 50K |
| 148. | H2N5401 | 600mA PNP epitaxial planar transistor for general purpose applications requiring high breakdown voltage | HSMC | - | 3 | - | - | 38K |
| 149. | HM5401 | Emitter to base voltage:6V; PNP epitaxial planar transistor for general purpose applications requiring high breakdown voltages | HSMC | SOT-89 | 3 | - | - | 34K |
| 150. | HMBT5401 | Emitter to base voltage:5V; 600mA PNP epitaxial planar transistor for general purpose applications requiring high breakdown voltage | HSMC | SOT-23 | 3 | - | - | 30K |
| 151. | K-05401GX-P | LCD back light, COB type, LCD character 40x2, yellow/green | PARA | - | - | - | - | 95K |
| 152. | MMBT5401 | 160V; 200mA PNP small signal surface mount transistor. Ideal for medium power application and switching | DIODS | SOT-23 | 3 | -55°C | 150°C | 47K |
| 153. | MMBT5401 | 160 V, PNP small signal surface mount transistor | TRSYS | SOT-23 | 3 | -55°C | 150°C | 171K |
| 154. | MMBT5401LT1 | 150 V, high voltage transistor | LRC | SOT-23 | 3 | -55°C | 150°C | 164K |
| 155. | MMDT5401 | 160V; 200mA dual PNP small signal surface mount transistor. Ideal for medium power amplification and switching | DIODS | SOT-363 | 6 | -55°C | 150°C | 41K |
| 156. | MMST5401 | 160V; 200mA PNP small signal surface mount transistor. Ideal for medium power amplification and switching | DIODS | SOT-323 | 3 | -55°C | 150°C | 41K |
| 157. | NTE5401 | Silicon controlled rectifier (SCR). 0.8 Amp sensitive gate. Repetitive peak reverse voltage Vrrm = 60V. | NTE | TO92 | 3 | -40°C | 100°C | 18K |
| 158. | UF5401 | 100 V, 3 A ultra-fast silicon rectifier | INVAC | DO | 2 | -65°C | 150°C | 79K |
| 159. | UF5401 | 3.0A, 100V ultra fast recovery rectifier | MCC | - | - | - | - | 82K |
| 160. | UF5401GP | 3.0A, 100V ultra fast recovery rectifier | MCC | - | - | - | - | 85K |
