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# | Part: | Description: | Manuf. | Package | Pins | T°min | T°max | PDF size |
461. | GLT40516-10E | 32k x 16 embedded EDO DRAM | GLINK | - | - | 0°C | 70°C | 249K |
462. | GLT5160L16-10TC | 100 MHz; 16M (2-bank x 524288-word x 16 bit) synchronous DRAM | GLINK | TSOP | 50 | 0°C | 70°C | 6M |
463. | GLT5160L16-6TC | 166 MHz; 16M (2-bank x 524288-word x 16-bit) synchronous DRAM | GLINK | TSOP | 44 | 0°C | 70°C | 6M |
464. | GLT5160L16-7TC | 143 MHz; 16M (2-bank x 524288-word x 16-bit) synchronous DRAM | GLINK | TSOP | 44 | 0°C | 70°C | 6M |
465. | GLT5160L16-8TC | 125 MHz; 16M (2-bank x 524288-word x 16-bit) synchronous DRAM | GLINK | TSOP | 44 | 0°C | 70°C | 6M |
466. | HAL516SF-A | Hall effect sensor (62 kHz) | IMET | SOT-89B | 3 | -40°C | 170°C | 321K |
467. | HAL516SF-E | Hall effect sensor (62 kHz) | IMET | SOT-89B | 3 | -40°C | 100°C | 321K |
468. | HAL516SF-K | Hall effect sensor (62 kHz) | IMET | SOT-89B | 3 | -40°C | 140°C | 321K |
469. | HAL516UA-A | Hall effect sensor (62 kHz) | IMET | TO-92UA | 3 | -40°C | 170°C | 321K |
470. | HAL516UA-E | Hall effect sensor (62 kHz) | IMET | TO-92UA | 3 | -40°C | 100°C | 321K |
471. | HAL516UA-K | Hall effect sensor (62 kHz) | IMET | TO-92UA | 3 | -40°C | 140°C | 321K |
472. | K4E151611D-J | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. | SMSNG | SOJ | 42 | 0°C | 70°C | 553K |
473. | K4E151611D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. | SMSNG | TSOP-II | 50 | 0°C | 70°C | 553K |
474. | K4E151611D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. | SMSNG | TSOP-II | 44 | 0°C | 70°C | 553K |
475. | K4E151612D-J | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. | SMSNG | SOJ | 42 | 0°C | 70°C | 553K |
476. | K4E151612D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. | SMSNG | TSOP-II | 50 | 0°C | 70°C | 553K |
477. | K4E151612D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. | SMSNG | TSOP-II | 44 | 0°C | 70°C | 553K |
478. | K4E151612D-T | 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. | SMSNG | TSOP-II | 44 | 0°C | 70°C | 553K |
479. | K4F151611D-J | 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. | SMSNG | SOJ | 42 | 0°C | 70°C | 528K |
480. | LH5164AZ8 | CMOS 64K (8K x 8)static RAM | SHARP | SOP | 28 | -30°C | 60°C | 66K |